MKI 50-06 A7
MKI 50-06 A7T
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
Type
MKI 50-06 A7
MKI 50-06 A7T
NTC - Option
without NTC
with NTC
13
T1
1
2
10
16
T2
D2
3
12
4
17
11
T6
D6
14
T
D1
9
T5
D5
T
I
C25
= 72 A
= 600 V
V
CES
V
CE(sat) typ.
= 1.9 V
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
±
20
72
50
I
CM
=
100
V
CEK
≤
V
CES
10
225
V
V
A
A
A
µs
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
W
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
•
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.9
2.2
4.5
0.7
200
50
60
300
30
2.3
1.7
2800
120
2.4
6.5
0.6
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.55 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 22
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
20110119a
© 2011 IXYS All rights reserved
1-4
MKI 50-06 A7
MKI 50-06 A7T
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
72
45
A
A
Conduction
Equivalent Circuits for Simulation
Characteristic Values
min.
typ. max.
V
F
I
RM
t
rr
R
thJC
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Maximum Ratings
-40...+150
-40...+125
2500
2.7 - 3.3
°C
°C
V~
Nm
IGBT (typ.)
C
th1
= 0.201 J/K; R
th1
= 0.42 K/W
C
th2
= 1.252 J/K; R
th2
= 0.131 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.116 J/K; R
th1
= 0.973 K/W
C
th2
= 0.88 J/K; R
th2
= 0.277 K/W
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
(per diode)
1.6
1.3
25
90
1.8
V
V
A
ns
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.82 V; R
0
= 28 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 0.89 V; R
0
= 8 m
Ω
Thermal Response
1.19 K/W
Characteristic Values
min.
typ. max.
R
pin-chip
d
S
d
A
R
thCH
Weight
Temperature Sensor NTC
(MKI ... A7T version only)
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min.
typ. max.
4.75
5.0
3375
5.25 kΩ
K
R
5
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
0.02
180
mΩ
mm
mm
K/W
g
10000
Ω
1000
100
0
25
50
75
100
T
MUBW2006A7
125 C 150
Dimensions in mm
(1 mm = 0.0394")
Typ. thermistor resistance versus
temperature
20110119a
© 2011 IXYS All rights reserved
2-4
MKI 50-06 A7
MKI 50-06 A7T
150
A
120
V
GE
= 17V
15V
13V
150
A
120
90
11V
V
GE
= 17V
15V
13V
I
C
I
C
90
60
30
0
0
1
2
3
4
V
CE
5
V
9V
T
VJ
= 25°C
11V
60
30
0
9V
T
VJ
= 125°C
6
0
1
2
3
4
V
CE
5
V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
A
120
I
C
90
A
75
I
F
60
90
45
60
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
30
T
VJ
= 25°C
30
0
4
6
8
10
12
V
GE
V
CE
= 20V
15
0
0.0
14
V
16
0.5
1.0
V
F
1.5
V
2.0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
40
A
I
RM
20
V
150
120
ns
90
60
T
VJ
= 125°C
V
R
= 300V
I
F
= 30A
MWI5006A7
15
V
GE
t
rr
t
rr
30
10
20
5
V
CE
= 300V
I
C
= 50A
10
I
RM
30
0
0
0
40
80
120
Q
G
nC
0
160
0
200
400
600
800
A/μs
-di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
20110119a
© 2011 IXYS All rights reserved
3-4
MKI 50-06 A7
MKI 50-06 A7T
10.0
mJ
E
on
100
ns
75
t
t
r
E
off
t
d(on)
4
mJ
E
off
400
ns
300
t
t
d(off)
7.5
3
5.0
V
CE
= 300V
V
GE
= ±15V
50
2
V
CE
= 300V
V
GE
= ±15V
200
2.5
E
on
R
G
= 22Ω
T
VJ
= 125°C
25
1
R
G
= 22Ω
T
VJ
= 125°C
100
0.0
0
40
80
I
C
A
0
120
0
0
40
80
I
C
t
f
A
0
120
Fig. 7 Typ. turn on energy and switching
times versus collector current
4
mJ
E
on
E
on
80
ns
60
t
r
V
CE
= 300V
V
GE
= ±15V
I
C
= 50A
T
VJ
= 125°C
Fig. 8 Typ. turn off energy and switching
times versus collector current
3
mJ
t
E
off
E
off
600
ns
t
d(on)
3
2
t
d(off)
V
CE
= 300V
V
GE
= ±15V
I
C
= 50A
T
VJ
= 125°C
400
t
2
40
1
200
1
0
10
20
30
40
R
G
20
50
Ω
60
0
0
10
20
30
40
R
G
0
50
Ω
60
t
f
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
I
CM
10
K/W
Z
thJC
1
Fig.10 Typ. turn off energy and switching
times versus gate resistor
diode
IGBT
90
0.1
60
0.01
30
R
G
= 22
Ω
T
VJ
= 125°C
single pulse
0.001
0.0001
0.00001 0.0001 0.001
MWI5006A7
0
0
100
200
300
400
500
600
V
CE
700
V
0.01
0.1
t
1
s 10
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
20110119a
© 2011 IXYS All rights reserved
4-4
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
