Bulletin PD-20617 rev. D 10/06
HFA04SD60S
Ultrafast, Soft Recovery Diode
Features
Ultrafast Recovery Time
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Guaranteed Avalanche
Specified at Operating Temperature
t
rr
= 38ns
I
F(AV)
= 4Amp
V
R
= 600V
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and
Switching Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of
the recovery eliminates the need for a snubber in most
applications. These devices are ideally suited for freewheeling,
flyback, power converters, motor drives, and other applications
where high speed and reduced switching losses are design
requirements.
Package Outline
D - PAK
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FRM
P
D
T
J
, T
STG
Cathode-to-Anode Voltage
Continuous Forward Current
T
C
= 100°C
Single Pulse Forward Current
Peak Repetitive Forward Current
T
C
= 116°C
Maximum Power Dissipation
T
C
= 100°C
Operating Junction and Storage Temperatures
- 55 to 150
°C
10
W
25
16
Max
600
4
Units
V
A
Document Number: 93031
www.vishay.com
1
HFA04SD60S
Bulletin PD-20617 rev. D 10/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
See Fig. 1
Min Typ Max Units Test Conditions
600
-
-
-
-
1.5
1.8
1.4
0.17
44
4
8.0
-
1.8
2.2
1.7
3.0
300
8
-
V
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 4A
I
F
= 8A
I
F
= 4A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= 0.8 x V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
I
R
Max. Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
17
28
38
2.9
3.7
40
70
280
235
-
42
57
5.2
6.7
60
105
-
-
A/µs
nC
A
ns
I
F
= 1.0A, di
F
/dt = 200A/µA, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 4A
V
R
= 200V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
di
(rec)
M
/dt Rate of Fall of recovery Current
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
T
S
R
thJC
R
thJA
Wt
Max. Junction Temperature Range
Max. Storage Temperature Range
Soldering Temperature, 10 sec
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
2.0
0.07
-
-
Max
- 55 to 150
- 55 to 150
240
5.0
80
-
-
12
10
Units
°C
°C/ W
g
(oz)
Kg*cm
lbf*in
T
Mounting Torque
6.0
5.0
Typical Socket Mount
Document Number: 93031
www.vishay.com
2
HFA04SD60S
Bulletin PD-20617 rev. D 10/06
100
1000
100
Reverse Current - I
R
(µA)
T
J
= 150˚C
125˚C
10
1
0.1
0.01
0.001
25˚C
10
Instantaneous Forward Current - I
F
(A)
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
0
100
200
300
400
500
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
100
1
Junction Capacitance - C
T
(pF)
T J = 25˚C
10
0.1
0
1
2
3
4
5
6
1
1
Fig. 1 - Typical Forward Voltage Drop Characteristics
Forward Voltage Drop - V
FM
(V)
10
(°C/W)
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
thJC
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Document Number: 93031
www.vishay.com
3
HFA04SD60S
Bulletin PD-20617 rev. D 10/06
50
If = 8A
If = 4A
14
12
10
8
6
4
Vr = 200V
Tj = 125˚C
Tj = 25˚C
40
trr (ns)
Irr (A)
If = 8A
If = 4A
30
2
0
100
Vr = 200V
Tj = 125˚C
Tj = 25˚C
20
100
di
F
/dt (A/ µs)
1000
1000
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Typical Recovery Current vs. di
F
/dt
Fig. 5 - Typical Reverse Recovery vs. di
F
/dt
200
180
160
di
(rec)M
/ dt (A/ µs)
Vr = 200V
Tj = 125˚C
Tj = 25˚C
1000
If = 8A
If = 4A
If = 8A
If = 4A
140
Qrr ( nC )
120
100
80
60
40
20
100
Vr = 200V
Tj = 125˚C
Tj = 25˚C
1000
di
F
/dt (A/µs )
100
100
di
F
/dt (A/µs )
1000
Fig. 8 - Typical di
(rec)M
/dt vs. di
F
/dt
Fig. 7 - Typical Stored Charge vs. di
F
/dt
Document Number: 93031
www.vishay.com
4
HFA04SD60S
Bulletin PD-20617 rev. D 10/06
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST G
D
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
/dt
di
f
F
/dt
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93031
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