BCW68GLT1G
General Purpose Transistor
PNP Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−60
−5.0
−800
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
3
1
2
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
Unit
mW
mW/°C
°C/W
mW
DG
M
G
MARKING DIAGRAM
DG MG
G
= Specific Device Code
= Date Code*
= Pb−Free Package
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW/°C
°C/W
°C
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BCW68GLT1G
BCW68GLT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
10000 / Tape & Reel
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
August, 2009
−
Rev. 5
1
Publication Order Number:
BCW68GLT1/D
BCW68GLT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
=
−10
mAdc, I
B
= 0)
Collector−Emitter Breakdown Voltage (I
C
=
−10
mAdc,
V
EB
= 0)
Emitter−Base Breakdown Voltage (I
E
=
−10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
=
−45
Vdc, I
E
= 0)
(V
CE
=
−45
Vdc, I
B
= 0, T
A
= 150°C)
Emitter Cutoff Current (V
EB
=
−4.0
Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−10
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−100
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−300
mAdc, V
CE
=
−1.0
Vdc)
Collector−Emitter Saturation Voltage (I
C
=
−300
mAdc, I
B
=
−30
mAdc)
Base−Emitter Saturation Voltage (I
C
=
−500
mAdc, I
B
=
−50
mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
=
−20
mAdc, V
CE
=
−10
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−10
Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
=
−0.5
Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
(I
C
=
−0.2
mAdc, V
CE
=
−5.0
Vdc, R
S
= 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
C
ibo
N
F
100
−
−
−
−
−
−
−
−
18
105
10
MHz
pF
pF
dB
h
FE
−
120
160
60
−
−
−
−
−
−
−
400
−
−
−1.5
−2.0
Vdc
Vdc
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
−45
−60
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−20
−10
−20
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
Symbol
Min
Typ
Max
Unit
I
EBO
V
CE(sat)
V
BE(sat)
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2
BCW68GLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU
−07
AND
−09
OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
DIM
A
A1
b
c
D
E
e
L
L1
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
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For additional information, please contact your loca
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3
BCW68GLT1/D
嵌入式系统
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