SiC
Silicon Carbide Diode
2nd Generation thinQ!™
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Data Sheet
Rev. 2.0, 2010-05-31
Final
Industrial & Multimarket
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
1
Description
The second generation of Infineon SiC Schottky diodes has emerged over the
years as the industry standard. The IDVxxS60C family is extending the already
broad portfolio with the TO220FullPAK package. In order to greatly reduce the
impact of the internal isolation of the FullPAK on the thermal performance, Infineon
is applying its patented diffusion soldering process for attaching the chip to the
leadframe. The result is nearly identical thermal characteristics to those of the SiC
diodes in the non-isolated TO220 package.
Features
•
•
•
•
•
•
•
•
Revolutionary semiconductor material - Silicon Carbide
Nearly no reverse / forward recovery charge
High surge current capability
Fully isolated package with nearly similar Rth,jc as the standard T0220
Suitable for high temperature operation
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Switching behavior independent of forward current, switching speed and
temperature
Benefits
•
•
•
•
•
•
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Good thermal performance without the need for additional isolation layer and washer
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures and less fans
Reduced EMI
Applications
Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS
Table 1
Parameter
Key Performance Parameters
Value
600
3.2
Unit
V
nC
A
V
DC
Q
C
I
F
@ T
C
< 120°C
2
Table 2
Pin 1
C
Pin Definition
Pin2
A
Pin 3
n.a.
Package
PG-TO220 FullPAK
Marking
D02S60C
Related Links
IFX SiC Diodes Webpage
Type / Ordering Code
IDV02S60C
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2010-05-31
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Table of Contents
Table of Contents
1
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
3
4
5
6
7
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
3
Rev. 2.0, 2010-05-31
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Maximum ratings
2
Maximum ratings
Table 3
Parameter
Maximum ratings
Symbol
Min.
I
F
I
F, SM
I
F, max
∫i²dt
V
RRM
dv/dt
P
tot
T
j
;
T
stg
-
-
-
-
-
-
-
-
-
- 55
-
-
-
-
-
-
-
-
-
-
-
Values
Typ.
Max.
2
11.5
9.7
100
0.61
0.44
600
50
18
175
50
V
V/ns
W
°C
Ncm
M2.5 screws
A²s
A
T
C
= < 120°C
T
C
= 25°C,
t
p
= 10 ms
T
C
= 150°C,
t
p
= 10 ms
T
C
= 25°C,
t
p
= 10 µs
T
C
= 25°C,
t
p
= 10 ms
T
C
= 150°C,
t
p
= 10 ms
T
j
= 25°C
V
R
= 0...480 V
T
C
= 25 °C
Unit
Note / Test Condition
Continuous forward current
Surge non-repetitive
forward current, sine halfwave
Non-repetitive peak forward current
i² t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
3
Thermal characteristics
Table 4
Parameter
Thermal characteristics TO-220 FullPAK
Symbol
Min.
-
-
-
-
-
-
Values
Typ.
Max.
8.5
62
260
°C
K/W
leaded
1.6 mm (0.063 in.)
from case for 10 s
Unit
Note /
Test Condition
Thermal resistance, junction - case
R
thJC
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
R
thJA
T
sold
Final Data Sheet
4
Rev. 2.0, 2010-05-31
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Electrical characteristics
4
Electrical characteristics
Table 5
Parameter
Static characteristics
Symbol
Min.
Values
Typ.
-
1.7
2.1
0.23
1
Max.
-
1.9
2.6
15
150
µA
V
600
-
-
-
-
Unit
Note / Test Condition
DC blocking voltage
Diode forward voltage
Reverse current
V
DC
V
F
I
R
T
j
= 25 °C,
I
R
= 0.015 mA
I
F
= 2 A,
T
j
= 25 °C
I
F
= 2 A,
T
j
= 150 °C
I
R
= 600 V,
T
j
=25 °C
I
R
= 600 V,
T
j
=150 °C
Table 6
Parameter
AC characteristics
Symbol
Min.
Values
Typ.
3.2
-
60
8
8
Max.
-
<10
-
-
-
nC
ns
pF
-
-
-
-
-
Unit
Note /
Test Condition
Total capacitive charge
Switching time
1)
Q
c
t
c
C
V
R
= 400 V,
F
≤I
F
max
di
F
/dt =200 A/μs,
T
j
=150 °C
V
R
= 1 V,
f=
1 MHz
V
R
= 300 V,
f=
1 MHz
V
R
= 600 V,
f=
1 MHz
1)
t
c
is the time constant for the capacitive displacement current waveform (independent from
T
j
,
I
LOAD
and
di/dt),
different from
t
rr
which is dependent on
T
j
,
I
LOAD
and
di/dt.
No reverse recovery time constant
t
rr
due to absence of minority carrier injection.
Final Data Sheet
5
Rev. 2.0, 2010-05-31
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