AUTOMOTIVE GRADE
AUIRFS4115
AUIRFSL4115
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
D
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
150V
10.3m
12.1m
99A
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
AUIRFSL4115
AUIRFS4115
Package Type
TO-262
D
2
-Pak
S
G
D
2
Pak
AUIRFS4115
G
S
D
TO-262
AUIRFSL4115
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4115
AUIRFS4115
AUIRFS4115TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
E
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
99
70
396
375
2.5
± 20
18
230
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
R
G
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
150
–––
–––
3.0
97
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.18
10.3
–––
–––
–––
–––
–––
–––
2.3
77
28
26
51
18
73
41
39
5270
490
105
460
530
–––
–––
12.1
5.0
–––
20
250
100
-100
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
AUIRFS/SL4115
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 3.5mA
m V
GS
= 10V, I
D
= 62A
V
S
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 50V, I
D
= 62A
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D
= 62A
V
DS
= 75V
nC
V
GS
= 10V
V
DD
= 98V
I
D
= 62A
ns
R
G
= 2.2
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 120V
V
GS
= 0V, V
DS
= 0V to 120V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 62A,V
GS
= 0V
T
J
= 25°C
V
DD
= 130V
ns
T
J
= 125°C
I
F
= 62A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Notes:
Typ. Max. Units
–––
–––
–––
86
110
300
450
6.5
99
396
1.3
–––
–––
–––
–––
–––
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.115mH, R
G
= 25, I
AS
= 63A, V
GS
=10V. Part not recommended for use above this value.
I
SD
62A,
di/dt
1040A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
JC
value shown is at time zero.
R
2
2015-10-27
AUIRFS/SL4115
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
5.0V
10
1
5.0V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 62A
2.5
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
2.0
10
T J = 25°C
1.5
1
VDS = 50V
60µs
PULSE WIDTH
0.1
2
4
6
8
10
12
14
16
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
100
QG, Total Gate Charge (nC)
ID= 62A
10000
C, Capacitance (pF)
VGS, Gate-to-Source Voltage (V)
VDS = 120V
VDS = 75V
VDS = 30V
Ciss
1000
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-27
1000
10000
AUIRFS/SL4115
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100µsec
100
DC
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
1msec
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
120
100
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
200
Id = 3.5mA
190
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fg 9.
Maximum Drain Current vs. Case Temperature
6.0
5.0
4.0
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
6.0
VGS(th) , Gate threshold Voltage (V)
5.0
4.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
3.0
2.0
1.0
0.0
-20
0
20
40
60
80 100 120 140 160
3.0
2.0
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-10-27
1
Thermal Response ( Z thJC ) °C/W
AUIRFS/SL4115
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
C
C
Ri (°C/W)
0.245
0.155
i
(sec)
0.0059149
0.0006322
0.01
1
2
Ci=
iRi
Ci=
iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
IF = 42A
V R = 130V
TJ = 25°C
TJ = 125°C
IRR (A)
50
IF = 62A
V R = 130V
TJ = 25°C
TJ = 125°C
40
40
IRR (A)
30
30
20
20
10
10
0
0
200
400
600
800
1000
diF /dt (A/µs)
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 14
- Typical Recovery Current vs. di
f
/dt
2500
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
QRR (nC)
Fig. 15
- Typical Recovery Current vs. di
f
/dt
3000
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
2000
2400
QRR (nC)
1500
1800
1000
1200
500
600
0
0
200
400
600
800
1000
diF /dt (A/µs)
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 16
- Typical Stored Charge vs. di
f
/dt
5
Fig. 17
- Typical Stored Charge vs. di
f
/dt
2015-10-27
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
