Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 0.72
0.9
0.57
- 55 to 150
- 2.4
- 1.9
- 10
- 0.6
0.7
0.45
W
°C
5s
- 20
±8
- 2.2
- 1.8
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t
5 s.
c. Surface mounted on FR4 board.
Symbol
R
thJA
Typical
120
140
Maximum
145
175
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72066
S11-2044-Rev. F, 17-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Si2301BDS
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Time
Turn-Off Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 6
I
D
- 1 A, V
GEN
= - 4.5 V
R
g
= 6
20
40
30
20
30
60
45
30
ns
Q
g
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 6 V, V
GS
= - 4.5 V
I
D
- 2.8 A
f = 1 MHz
2
4.5
0.7
1.1
8
375
95
65
pF
16
10
nC
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 4.5 V
V
DS
- 5 V, V
GS
= - 2.5 V
V
GS
½
- 4.5 V, I
D
= - 2.8 A
V
GS
= - 2.5 V, I
D
= - 2 A
V
DS
= - 5 V, I
D
= - 2.8 A
I
S
= - 0.75 A, V
GS
= 0 V
-6
-3
0.080
0.110
6.5
- 0.80
- 1.2
0.100
0.150
- 20
- 0.45
- 0.95
± 100
-1
- 10
V
nA
µA
A
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test: pulse width
300 µs duty cycle
2
%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72066
S11-2044-Rev. F, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
V
GS
= 5 thru 2.5 V
8
2V
6
I
D
- Drain Current (A)
10
T
C
= - 55 °C
8
I
D
- Drain Current (A)
25 °C
6
125 °C
4
1.5 V
2
1V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
3.0
Output Characteristics
0.5
800
Transfer Characteristics
0.4
600
0.3
C - Capacitance (pF)
400
C
iss
R
DS(on)
-
0.2
V
GS
= 2.5 V
200
0.1
V
GS
= 4.5 V
C
oss
C
rss
0
0
2
4
6
I
D
- Drain Current (A)
8
10
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
0.0
On-Resistance vs. Drain Current
5
1.6
Capacitance
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 10 V
I
D
= 2.8 A
V
GS
- Gate-to-Source Voltage (V)
4
V
GS
= 4.5 V
I
D
= 2.8 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72066
S11-2044-Rev. F, 17-Oct-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.6
0.5
I
S
- Source Current (A)
T
J
= 150 °C
0.4
I
D
= 2.8 A
1
T
J
= 25 °C
0.3
R
DS(on)
-
0.2
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
On-Resistance vs. Gate-to-Source Voltage
10
0.3
8
V
GS(th)
Variance (V)
0.2
I
D
= 250 µA
0.1
Power (W)
6
4
T
A
= 25 °C
0.0
- 0.1
2
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
T
J
- Temperature (°C)
10
Time (s)
100
1000
Threshold Voltage
100
Single Pulse Power
10
I
D
- Drain Current (A)
Limited by
R
DS(on)*
1
10
µs
100
µs
1 ms
10 ms
T
A
= 25 °C
Single Pulse
0.1
100 ms
DC, 100 s, 10 s, 1 s
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Square Wave Pulse Duration (s)
Safe Operating Area
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Document Number: 72066
S11-2044-Rev. F, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72066.
Document Number: 72066
S11-2044-Rev. F, 17-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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