Freescale Semiconductor
Technical Data
Document Number: MRF6S21060N
Rev. 5, 12/2008
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and
TD--SCDMA applications.
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 610 mA,
P
out
= 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
225_C Capable Plastic Package
•
N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S21060NR1
MRF6S21060NBR1
2110-
-2170 MHz, 14 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6S21060NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6S21060NBR1
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
Symbol
R
θJC
Value
(2,3)
0.89
1.04
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2006, 2008. All rights reserved.
MRF6S21060NR1 MRF6S21060NBR1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
RF Power Field Effect Transistors
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 610 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2
—
2.2
2.8
0.3
2.5
4
—
Vdc
Vdc
Vdc
Dynamic Characteristics
(1)
C
rss
—
1.5
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 610 mA, P
out
= 14 W Avg., f1 = 2115.5 MHz, f2 =
2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
η
D
IM3
ACPR
IRL
13.5
24.5
—
—
—
15.5
26
--37
--40
--14
16.5
—
--35
--38
--10
dB
%
dBc
dBc
dB
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S21060NR1 MRF6S21060NBR1
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
V
BIAS
R1
R2
C6
C1
C2
C3
Z15
C4
C5
V
SUPPLY
Z6
RF
INPUT
R3
Z1
C7
Z2
Z3
Z4
Z5
Z7
DUT
Z8
Z9
Z10
Z11
Z12
Z13
C8
Z14
RF
OUTPUT
Z16
V
SUPPLY
C9
C10
C11
LIFETIME BUY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.250″ x 0.080″ Microstrip
0.860″ x 0.080″ Microstrip
0.300″ x 0.405″ Microstrip
0.350″ x 0.080″ Microstrip
0.350″ x 0.755″ Microstrip
0.680″ x 0.080″ Microstrip
0.115″ x 0.755″ Microstrip
0.115″ x 1.000″ Microstrip
0.240″ x 1.000″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.270″ x 0.300″ Microstrip
0.230″ x 0.080″ Microstrip
0.310″ x 0.300″ Microstrip
0.830″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
1.000″ x 0.080″ Microstrip
1.100″ x 0.070″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
100 nF Chip Capacitor
4.7 pF Chip Capacitors
6.8 pF Chip Capacitors
10
μF,
35 V Chip Capacitors
1 kΩ, 1/4 W Chip Resistor
10 kΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
CDR33BX104AKYS
ATC100B4R7BT500XT
ATC100B6R8BT500XT
GRM55DR61H106KA88L
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
Kemet
ATC
ATC
Murata
Vishay
Vishay
Vishay
C1
C2, C7
C3, C8, C9
C4, C5, C6, C10, C11
R1
R2
R3
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C4
R2
C6
C1
C2
R3
C3
C5
C7
C8
LIFETIME BUY
C9
C10 C11
MRF6S21060N Rev. 3
Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout
MRF6S21060NR1 MRF6S21060NBR1
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R1
CUT OUT AREA
TYPICAL CHARACTERISTICS
16
15.8
15.6
G
ps
, POWER GAIN (dB)
15.4
15.2
15
14.8
14.6
14.4
14.2
14
2060
2080
2100
IRL
2120
2140
ACPR
2160
2180
2200
V
DD
= 28 Vdc, P
out
= 14 W (Avg.)
I
DQ
= 610 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IM3
η
D
28
26
G
ps
25
24
--36
--38
--40
--42
--44
--46
2220
IM3 (dBc), ACPR (dBc)
--5
--10
--15
--20
--25
η
D
, DRAIN
EFFICIENCY (%)
f, FREQUENCY (MHz)
LIFETIME BUY
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 14 Watts Avg.
15.6
15.4
15.2
G
ps
, POWER GAIN (dB)
15
14.8
14.6
14.4
14.2
14
2060
2080
2100
2120
2140
V
DD
= 28 Vdc, P
out
= 28 W (Avg.)
I
DQ
= 610 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IM3
IRL
ACPR
2160
2180
2200
39
η
D
38
37
36
--26
IM3 (dBc), ACPR (dBc)
--28
--30
--32
--34
2220
η
D
, DRAIN
EFFICIENCY (%)
G
ps
--6
--9
--12
--15
--18
--21
--24
f, FREQUENCY (MHz)
Figure 4. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 28 Watts Avg.
17
16
763 mA
610 mA
15
14
305 mA
13
12
11
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
458 mA
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--20
--30
--40
--50
458 mA
--60
1
763 mA
10
P
out
, OUTPUT POWER (WATTS) PEP
610 mA
100
200
915 mA
I
DQ
= 305 mA
I
DQ
= 915 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
27
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
PCB设计
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