DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D252
BGY1085A
1000 MHz, 18.5 dB gain push-pull
amplifier
Product specification
Supersedes data of 1997 Apr 15
2001 Oct 25
NXP Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull
amplifier
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures
excellent reliability.
DESCRIPTION
Hybrid high amplifier module for
CATV systems operating over a
frequency range of 40 to 1000 MHz
at a supply voltage of +24 V (DC).
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
PARAMETER
power gain
CONDITIONS
f = 50 MHz
f = 1000 MHz
total current consumption (DC) V
B
= 24 V
18
18.5
MIN.
19
240
PINNING - SOT115J
PIN
1
2
3
5
7
8
9
input
common
common
+V
B
common
common
output
Side view
BGY1085A
DESCRIPTION
alfpage
1
2
3
8
5 7 9
MSA319
Fig.1 Simplified outline.
MAX.
dB
dB
UNIT
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
i
T
stg
T
mb
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
40
20
MIN.
65
+100
+100
MAX.
C
C
UNIT
dBmV
2001 Oct 25
2
NXP Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull
amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 1000 MHz; T
case
= 30
C;
Z
S
= Z
L
= 75
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 1000 MHz
SL
FL
S
11
f = 40 to 1000 MHz
f = 40 to 1000 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 1000 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 1000 MHz
CTB
composite triple beat
85 channels flat;
V
o
= 44 dBmV;
measured at 595.25 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 745.25 MHz
150 channels flat;
V
o
= 40 dBmV;
measured at 985.25 MHz
X
mod
cross modulation
85 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
150 channels flat;
V
o
= 40 dBmV;
measured at 55.25 MHz
CSO
composite second order
distortion
85 channels flat;
V
o
= 44 dBmV;
measured at 596.5 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 746.5 MHz
150 channels flat;
V
o
= 40 dBmV;
measured at 986.5 MHz
MIN.
18
18.5
0
20
18.5
17
15.5
14
20
18.5
17
15.5
14
TYP.
BGY1085A
SYMBOL
G
p
MAX.
19
2
0.3
58
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
53
dB
53
dB
58
dB
54
dB
54
dB
60
dB
56
dB
56
dB
2001 Oct 25
3
NXP Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull
amplifier
SYMBOL
d
2
PARAMETER
second order distortion
note 1
note 2
note 3
V
o
output voltage
d
im
=
60
dB
note 4
note 5
note 6
F
noise figure
f = 50 MHz
f = 550 MHz
f = 600 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
f = 1000 MHz
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 541.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 596.5 MHz.
2. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
3. f
p
= 55.25 MHz; V
p
= 40 dBmV;
f
q
= 931.25 MHz; V
q
= 40 dBmV;
measured at f
p
+ f
q
= 986.5 MHz.
4. f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
6
dB;
f
r
= 599.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 588.25 MHz.
5. f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
6
dB;
f
r
= 749.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 738.25 MHz.
6. f
p
= 980.25 MHz; V
p
= V
o
;
f
q
= 987.25 MHz; V
q
= V
o
6
dB;
f
r
= 989.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 978.25 MHz.
total current consumption (DC)
note 7
61
60
57
CONDITIONS
MIN.
68
TYP.
BGY1085A
MAX.
72
65
5.5
6
6
6.5
7
7.5
7.5
240
UNIT
dB
dB
dB
dBmV
dBmV
dBmV
dB
dB
dB
dB
dB
dB
dB
mA
7. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
4
NXP Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull
amplifier
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
D
E
Z
p
BGY1085A
SOT115J
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e
e1
q2
q1
y
M
B
x
M
B
b
w
M
2
3
5
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.5
b
c
D
max.
d
E
max.
e
e1
F
L
min.
p
Q
max.
q
q1
q2
S
U1
U2
W
w
x
y
0.1
Z
max.
3.8
mm 20.8
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
OUTLINE
VERSION
SOT115J
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-02-04
10-06-18
2001 Oct 25
5
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