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BSS159N-H6906: 产品描述Bipolar Transistors - BJT 600mA 60V PNP; 产品类别半导体分立半导体; 文件大小195KB，共9页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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Bipolar Transistors - BJT 600mA 60V PNP

参数名称	属性值
产品种类 Product Category	MOSFET
制造商 Manufacturer	Infineon(英飞凌)
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-23-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	230 mA
Rds On - Drain-Source Resistance	1.7 Ohms
Vgs th - Gate-Source Threshold Voltage	- 3.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	1.4 nC
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
资格 Qualification	AEC-Q100
Channel Mode	Depletion
系列 Packaging	Reel
系列 Packaging	MouseReel
系列 Packaging	Cut Tape
Fall Time	9 ns
Forward Transconductance - Min	100 mS
高度 Height	1.1 mm
长度 Length	2.9 mm
Pd-功率耗散 Pd - Power Dissipation	360 mW
产品 Product	MOSFET Small Signal
Rise Time	2.9 ns
工厂包装数量 Factory Pack Quantity	3000
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	9 ns
Typical Turn-On Delay Time	3.1 ns
宽度 Width	1.3 mm
单位重量 Unit Weight	0.000282 oz

	BSS159N-H6906	BSS159N-L6327	BSS159NH6327XT
描述	Bipolar Transistors - BJT 600mA 60V PNP	MOSFET N-Ch 60V 230mA SOT-23-3	MOSFET N-Ch 60V 230mA SOT-23-3
产品种类 Product Category	MOSFET	-	MOSFET
制造商 Manufacturer	Infineon(英飞凌)	-	Infineon(英飞凌)
RoHS	Details	-	Details
技术 Technology	Si	-	Si
安装风格 Mounting Style	SMD/SMT	-	SMD/SMT
封装 / 箱体 Package / Case	SOT-23-3	-	SOT-23-3
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V	-	60 V
Id - Continuous Drain Current	230 mA	-	230 mA
Rds On - Drain-Source Resistance	1.7 Ohms	-	1.7 Ohms
Vgs th - Gate-Source Threshold Voltage	- 3.5 V	-	- 3.5 V
Vgs - Gate-Source Voltage	20 V	-	20 V
Qg - Gate Charge	1.4 nC	-	1.4 nC
最小工作温度 Minimum Operating Temperature	- 55 C	-	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C	-	+ 150 C
Configuration	Single	-	Single
资格 Qualification	AEC-Q100	-	AEC-Q100
Channel Mode	Depletion	-	Depletion
系列 Packaging	Cut Tape	-	Cut Tape
Fall Time	9 ns	-	9 ns
Forward Transconductance - Min	100 mS	-	100 mS
高度 Height	1.1 mm	-	1.1 mm
长度 Length	2.9 mm	-	2.9 mm
Pd-功率耗散 Pd - Power Dissipation	360 mW	-	360 mW
产品 Product	MOSFET Small Signal	-	MOSFET Small Signal
Rise Time	2.9 ns	-	2.9 ns
工厂包装数量 Factory Pack Quantity	3000	-	3000
Transistor Type	1 N-Channel	-	1 N-Channel
Typical Turn-Off Delay Time	9 ns	-	9 ns
Typical Turn-On Delay Time	3.1 ns	-	3.1 ns
宽度 Width	1.3 mm	-	1.3 mm
单位重量 Unit Weight	0.000282 oz	-	0.000282 oz

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