®
BYV52/PI
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
A1
K
A2
DESCRIPTION
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
I
F(RMS)
I
F(AV)
RMS forward current
I
FSM
b
O
Tstg
Tj
so
te
le
Average forward current
SOT93
δ
= 0.5
TOP3I
Surge non repetitive forward current
Storage and junction temperature range
ro
P
uc
d
s)
t(
so
b
-O
SOT93
(Plastic)
P
te
le
od
r
s)
t(
uc
isolated
TOP3I
(Plastic)
BYV52PI-200
BYV52-200
Parameter
Per diode
Tc=110°C
Tc=90°C
tp=10ms
sinusoidal
Per diode
Per diode
Per diode
Value
50
30
30
500
- 40 to + 150
- 40 to + 150
Unit
A
A
A
°C
°C
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
Value
200
Unit
V
October 1999
Ed : 2C
1/6
BYV52/PI
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
SOT93
Per diode
Total
TOP3I
Per diode
Total
Value
1.2
0.75
1.8
1.2
0.3
0.6
Unit
°C/W
Rth (c)
Coupling
SOT93
TOP3I
°C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
I
R
*
T
j
= 25°C
T
j
= 100°C
V
F **
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
I
F
= 20 A
I
F
= 40 A
I
F
= 40 A
Test Conditions
V
R
= V
RRM
Min.
Typ.
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
µs,
duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x I
F(AV)
+ 0.0075 x I
F2(RMS)
RECOVERY CHARACTERISTICS
O
so
b
Symbol
trr
tfr
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
Max.
25
2.5
0.85
1.00
1.15
V
Unit
µA
mA
Test Conditions
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
R
= 30V
Irr = 0.25A
Min.
Typ.
Max.
35
Unit
ns
T
j
= 25°C
dI
F
/dt = -50A/µs
50
T
j
= 25°C
I
F
= 1A
V
FR
= 1.1 x V
F
I
F
= 1A
tr = 5 ns
10
ns
V
FP
2/6
T
j
= 25°C
tr = 5 ns
1.5
V
BYV52/PI
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
500
=0.2
=0.1
=0.05
=0.5
=1
Fig.2 :
Peak current versus form factor.
40
35
30
25
20
15
10
5
IM(A)
450
400
350
300
250
T
=tp/T
tp
P=20W
T
I
M
200
150
100
P=10W
P=30W
I F(av)(A)
5
10
15
20
25
=tp/T
tp
50
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0
0
30
35
Fig.3 :
Forward voltage drop versus forward
current (maximum values).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=125
o
C
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
K
Zth(j-c) (tp.
K =
Rth(j-c)
=0.5
=0.2
IFM(A)
1
10
0.1
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
(SOD93)
300
O
250
200
so
b
IM(A)
IM
te
le
ro
P
uc
d
s)
t(
100
so
b
-O
=0.1
0.5
P
te
le
)
od
r
s)
t(
uc
1
T
0.2
Single pulse
300
0.1
1.0E-03
1.0E-02
tp(s)
1.0E-01
=tp/T
tp
1.0E+00
Fig.6 :
Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
250
200
150
IM(A)
150
100
50
0
0.001
t
=0.5
Tc=25
o
C
100
Tc=50
o
C
Tc=25
o
C
IM
Tc=50
o
C
50
t(s)
0.01
0.1
Tc=110
o
C
t
=0.5
Tc=90
o
C
t(s)
0.01
0.1
1
1
0
0.001
3/6
BYV52/PI
Fig.7 :
Average current
temperature.
(duty cycle : 0.5) (SOD93)
I F(av)(A)
35
Rth(j-a)=Rth(j-c)
versus
ambient
Fig.8 :
Average current
temperature.
(duty cycle : 0.5) (TOP3I)
35
30
versus
ambient
I F(av)(A)
Rth(j-a)=Rth(j-c)
30
25
20
15
10
5
=tp/T
tp
=0.5
T
25
20
15
Rth(j-a)=15
o
C/W
=0.5
T
=tp/T
tp
10
5
Rth(j-a)=15
o
C/W
Tamb(
o
C)
0
0
20
40
60
80
100
120
140
160
Tamb(
o
C)
0
0
20
40
60
80
100
Fig.9 :
Junction capacitance versus reverse
voltage applied (Typical values).
C(pF)
Fig.10 :
Recovery charges versus dI
F
/dt.
20 0
1 90
1 80
1 70
1 60
1 50
1 40
1 30
1 20
11 0
1 00
F=1Mhz Tj=25
o
C
QRR(nC)
90%CONFIDENCE
90
80
70
60
50
40
30
20
IF=IF(av)
VR(V)
10
1 00
1
Fig.11 :
Peak reverse current versus dIF/dt.
3.0
2.5
IRM(A)
O
2.0
so
b
90%CONFIDENCE
et
l
P
e
ro
uc
d
s)
t(
1 00
so
b
-O
10
0
1
P
te
le
od
r
s)
t(
uc
120
140
160
Tj=100
O
C
Tj=25
O
C
dIF/dt(A/us)
10
1 00
200
Fig.12 :
Dynamic parameters versus junction
temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125
o
C]
1.50
1.25
Tj=100
O
C
IF=IF(av)
1.00
IRM
1.5
1.0
0.5
0.0
1
Tj=25
O
C
0.75
QRR
0.50
0.25
0.00
0
25
Tj(
o
C)
dIF/dt(A/us)
20
10
1 00
50
75
100
125
150
4/6
BYV52/PI
PACKAGE MECHANICAL DATA
SOD93
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
4.70
4.90 0.185
0.193
1.17
1.37 0.046
0.054
2.50
0.098
1.27
0.050
0.50
0.78 0.020
0.031
1.10
1.30 0.043
0.051
1.75
0.069
10.80
11.10 0.425
0.437
14.70
15.20 0.578
0.598
12.20
0.480
16.20
0.638
18.0
0.709
3.95
4.15 0.156
0.163
31.00
1.220
4.00
4.10 0.157
0.161
REF.
A
C
D
D1
E
F
F3
G
H
L
L2
L3
L5
L6
O
Marking
: Type number
Cooling method : C
Weight : 3.79 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
5/6
测试/测量
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