NVTFS4C25N
Power MOSFET
30 V, 17 mW, 22 A, Single N−Channel,
m8FL
Features
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVTFS4C25NWF − Wettable Flanks Product
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Notes 1, 3, 5)
Power Dissipation R
qJA
(Notes 1, 3, 5)
Continuous Drain
Current R
yJC
(Notes 1, 2, 4, 5)
Power Dissipation
R
yJC
(Notes 1, 2, 4, 5)
Pulsed Drain Current
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
C
= 25°C
Steady
State
T
C
= 85°C
T
C
= 25°C
T
C
= 85°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
10.1
7.8
3.0
1.8
22.1
17.1
14.3
8.6
90
−55 to
+175
14
11.2
260
A
°C
A
mJ
W
A
W
Unit
V
V
A
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V
(BR)DSS
30 V
26.5 mW @ 4.5 V
R
DS(on)
MAX
17 mW @ 10 V
22 A
I
D
MAX
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
MARKING DIAGRAM
1
1
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, I
L
= 6.7 A
pk
, L = 0.5 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
°C
See detailed ordering and shipping information on page 6 of
this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Psi (y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to a single case surface.
3. Surface−mounted on FR4 board using 650 mm
2
, 2 oz. Cu Pad.
4. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
5. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
April, 2014 − Rev. 1
Publication Order Number:
NVTFS4C25N/D
NVTFS4C25N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain) (Notes 6, 7 and 9)
Junction−to−Ambient – Steady State (Notes 6 and 8)
Symbol
Y
qJC
R
qJA
Value
10.5
50
Unit
°C/W
6. The entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific
conditions noted.
7. Psi (y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to a single case surface.
8. Surface−mounted on FR4 board using 650 mm
2
, 2 oz. Cu Pad.
9. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
15.3
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 10)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
1.3
−4.5
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 10 A
I
D
= 9 A
13
21
23
1.0
17
26.5
mW
S
W
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 11)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
g
FS
R
G
V
DS
= 1.5 V, I
D
= 15 A
T
A
= 25°C
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 20 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 20 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
500
295
85
0.170
5.1
0.9
1.7
2.7
3.3
10.3
V
nC
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 10 A, R
G
= 3.0
W
8.0
32
10
3.0
4.0
25
13
2.0
ns
ns
10. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
11. Switching characteristics are independent of operating junction temperatures.
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NVTFS4C25N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.87
0.75
18.2
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
9.8
8.4
5.7
nC
ns
1.2
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
10. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
11. Switching characteristics are independent of operating junction temperatures.
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NVTFS4C25N
TYPICAL CHARACTERISTICS
40
35
I
D
, DRAIN CURRENT (A)
30
25
20
15
10
5
0
0
1
2
3
T
J
= 25°C
4
40
4.2 V
I
D
, DRAIN CURRENT (A)
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
0
5
0
0.5
1.0
1.5
2.0
2.5
30
V
DS
= 5 V
4.5 V to 10 V
20
10
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
3.0
3.5
4.0
4.5 5.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.052
0.042
0.032
0.022
0.012
0.002
3.0
4.0
5.0
6.0
7.0
8.0
I
D
= 30 A
0.045
T
J
= 25°C
0.035
V
GS
= 4.5 V
0.025
0.015
V
GS
= 10 V
0.005
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
9.0
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. V
GS
1.9
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
1
−25
0
25
50
75
100
125
150
175
I
D
= 10 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
10
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVTFS4C25N
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
800
700
C, CAPACITANCE (pF)
600
500
400
300
200
100
0
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
6
Q
gs
4
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 20 A
0
2
4
6
8
10
12
Q
gd
2
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
20
18
t
r
t, TIME (ns)
10
t
d(off)
t
d(on)
t
f
1
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
0.1
1
10
R
G
, GATE RESISTANCE (W)
100
16
14
12
10
8
6
4
2
0
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
NVTFS4C25N FBSOA
T
C
= 25°C, V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
Figure 10. Diode Forward Voltage vs. Current
10
0.01 ms
0.1 ms
1
1 ms
dc
1
10
10 ms
100
0.1
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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