NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* 2 Amps continuous current
* Low saturation voltage
* P
tot
= 1 Watt
FXT653
B
C
E
REFER TO ZTX653 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
120
100
5
6
2
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
120
100
5
0.1
10
0.1
0.13
0.23
0.9
0.8
70
100
55
25
140
200
200
110
55
175
30
0.3
0.5
1.25
1
300
MHz
pF
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=100V, I
E
=0
V
CB
=100V,
T
amb
=100°C
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
3-48
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