AUTOMOTIVE GRADE
AUIRLS4030-7P
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
100V
3.2m
3.9m
190A
Features
Optimized for Logic Level Drive
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base Part Number
AUIRLS4030-7P
Absolute Maximum Ratings
Package Type
D
2
Pak 7 Pin
D
2
Pak 7 Pin
AUIRLS4030-7P
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLS4030-7P
AUIRLS4030-7TRL
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
190
130
750
370
2.5
± 16
320
See Fig.14,15, 22a, 22b
13
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-10-10
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
R
G
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
100
–––
–––
–––
1.0
250
–––
–––
–––
–––
–––
AUIRLS4030-7P
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
0.10 ––– V/°C Reference to 25°C, I
D
= 5mA
3.2
3.9
V
GS
= 10V, I
D
= 110A
m
3.3
4.1
V
GS
= 4.5V, I
D
= 94A
–––
2.5
V V
DS
= V
GS
, I
D
= 250µA
–––
–––
–––
–––
–––
2.0
–––
S
20
µA
250
100
nA
-100
–––
V
DS
= 25V, I
D
= 110A
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
V
GS
= 16V
V
GS
= -16V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
–––
93
140
–––
27
–––
–––
43
–––
–––
50
–––
–––
53
–––
––– 160 –––
––– 110 –––
–––
87
–––
––– 11490 –––
––– 680 –––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
300
760
1170
–––
–––
–––
I
D
= 110A
V
DS
= 50V
nC
V
GS
= 4.5V
V
DD
= 65V
I
D
= 110A
ns
R
G
= 2.7
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 110A,V
GS
= 0V
T
J
= 25°C
V
DD
= 85V
ns
T
J
= 125°C
I
F
= 110A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Typ. Max. Units
–––
–––
–––
53
63
99
155
3.3
190
750
1.3
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.05mH, R
G
= 25, I
AS
= 110A, V
GS
=10V. Part not recommended for use above this value.
I
SD
110A,
di/dt
1520A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
JC
value shown is at time zero.
R
2
2017-10-10
AUIRLS4030-7P
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.5V
2.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
10
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = 175°C
2.5
ID = 110A
VGS = 10V
2.0
10
T J = 25°C
1.5
1
VDS = 25V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
5.0
ID = 110A
VGS, Gate-to-Source Voltage (V)
4.0
VDS = 80V
VDS = 50V
C, Capacitance (pF)
10000
C iss
3.0
1000
C oss
C rss
2.0
1.0
100
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.0
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2017-10-10
1000
T J = 175°C
100
10000
AUIRLS4030-7P
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
1msec
10
T J = 25°C
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
0.1
VDS , Drain-to-Source Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
200
180
160
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
4.0
3.5
3.0
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
25
50
75
100
ID
TOP
12A
16A
BOTTOM 110A
2.5
2.0
1.5
1.0
0.5
0.0
-20
0
20
40
60
80
100
120
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2017-10-10
1
Thermal Response ( Z thJC ) °C/W
AUIRLS4030-7P
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
C
C
Ri (°C/W)
0.176
0.227
I
(sec)
0.000343
0.006073
0.01
1
2
C i=
i R
i
Ci =
iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
400
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 110A
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
EAR , Avalanche Energy (mJ)
2017-10-10
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