MJE15032 (NPN),
MJE15033 (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
Features
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•
•
•
•
•
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
250 VOLTS, 50 WATTS
COMPLEMENTARY
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
50
0.40
P
D
2.0
0.016
T
J
, T
stg
HBM
MM
– 65 to + 150
3B
C
W
W/_C
_C
V
V
4
W
W/_C
Value
250
250
5.0
8.0
16
2.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
1
BASE
COLLECTOR
2, 4
COLLECTOR
2, 4
1
BASE
3
EMITTER
3
EMITTER
MARKING
DIAGRAM
TO−220
CASE 221A
STYLE 1
A YW
MJE1503xG
AKA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
2.5
_C/W
62.5
Unit
_C/W
MJE1503x = Specific Device Code
x
= 2 or 3
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJE15032G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
MJE15033G
1
August, 2013 − Rev. 5
Publication Order Number:
MJE15032/D
MJE15032 (NPN), MJE15033 (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 250 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
Base−Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
2. f
T
=
⎪h
fe
⎪•
f
test
.
f
T
30
−
MHz
h
FE
70
50
10
V
CE(sat)
−
V
BE(on)
−
1.0
0.5
Vdc
−
−
−
Vdc
−
V
CEO(sus)
250
I
CBO
−
I
EBO
−
10
10
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
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2
MJE15032 (NPN), MJE15033 (PNP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
D = 0.5
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.2
0.1
0.05
0.02
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
2.0
5.0
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500 1.0 k
Figure 1. Thermal Response
100
IC, COLLECTOR CURRENT (AMPS)
100
ms
10
50 ms
250 ms
10 ms
1.0
0.1
0.01
1.0
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 2 and 4 is based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 2. MJE15032 & MJE15033
Safe Operating Area
T
A
PD, POWER DISSIPATION (WATTS)
T
C
3.0
60
2.0
40
T
C
1.0
20
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 3. Power Derating
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3
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
1000
150°C
h FE, DC CURRENT GAIN
25°C
100
-55°C
h FE, DC CURRENT GAIN
100
-55°C
10
1000
PNP − MJE15033
150°C
25°C
10
1.0
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
1.0
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 4. NPN − MJE15032
V
CE
= 5 V DC Current Gain
10
10
Figure 5. PNP − MJE15033
V
CE
= 5 V DC Current Gain
V, VOLTAGE (VOLTS)
1.0
-55°C
25°C
150°C
V, VOLTAGE (VOLTS)
1.0
-55°C
25°C
150°C
0.1
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
0.1
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 6. NPN − MJE15032
V
CE
= 5 V V
BE(on)
Curve
10
100
Figure 7. PNP − MJE15033
V
CE
= 5 V V
BE(on)
Curve
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
150°C
1.0
25°C
10
1.0
25°C
-55°C
150°C
-55°C
0.1
0.1
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 8. NPN − MJE15032
V
CE(sat)
I
C
/I
B
= 10
Figure 9. PNP − MJE15033
V
CE(sat)
I
C
/I
B
= 10
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4
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
100
100
150°C
V, VOLTAGE (VOLTS)
10
25°C
-55°C
1.0
PNP − MJE15033
V, VOLTAGE (VOLTS)
10
25°C
1.0
150°C
-55°C
0.1
0.1
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 10. NPN − MJE15032
V
CE(sat)
I
C
/I
B
= 20
10
V BE, BASE EMITTER VOLTAGE (VOLTS)
V BE, BASE EMITTER VOLTAGE (VOLTS)
10
Figure 11. PNP − MJE15033
V
CE(sat)
I
C
/I
B
= 20
1.0
-55°C
25°C
150°C
1.0
-55°C
25°C
150°C
0.1
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
0.1
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 12. NPN − MJE15032
V
BE(sat)
I
C
/I
B
= 10
Figure 13. PNP − MJE15033
V
BE(sat)
I
C
/I
B
= 10
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