NDD01N60, NDT01N60
N-Channel Power MOSFET
600 V, 8.5
W
Features
•
100% Avalanche Tested
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Continuous Drain Current R
qJC
Steady State, T
C
= 25°C (Note 1)
Continuous Drain Current R
qJC
Steady State, T
C
= 100°C (Note 1)
Pulsed Drain Current, t
p
= 10
ms
Power Dissipation – R
qJC
Steady State, T
C
= 25°C
Gate−to−Source Voltage
Single Pulse Drain−to−Source
Avalanche Energy (I
PK
= 1.0 A)
Peak Diode Recovery (Note 2)
Source Current (Body Diode)
Lead Temperature for Soldering
Leads
Operating Junction and Storage
Temperature
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
EAS
dv/dt
I
S
T
L
T
J
, T
STG
1.5
260
−55
to +150
1.5
1.0
6.0
46
±30
13
4.5
0.4
NDD
600
0.4
0.25
1.5
2.5
NDT
Unit
V
A
A
A
W
V
mJ
V/ns
A
°C
°C
4
1 2
3
4
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V
(BR)DSS
600 V
R
DS(ON)
MAX
8.5
W
@ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
2
Drain 3
1
Gate Source
4
Drain
YWW
01
N60G
1 2 3
Gate Drain Source
Drain
4
AYW
01N60G
G
1
2
3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
S
= 1.5 A, di/dt
≤
100 A/ms, V
DD
≤
BV
DSS
IPAK
CASE 369D
STYLE 2
1
2
3
= Year
= Work Week
= Pb−Free Package
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient
NDD01N60
Symbol
R
qJC
R
qJA
Value
2.7
38
96
58
141
Unit
°C/W
°C/W
Y
WW
G
(Note 4) NDD01N60
(Note 3) NDD01N60−1
(Note 4) NDT01N60
(Note 5) NDT01N60
4
12
3
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
SOT−223
CASE 318E
STYLE 3
A
= Assembly Location
Y
= Year
W
= Work Week
01N60 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
January, 2013
−
Rev. 2
1
Publication Order Number:
NDD01N60/D
YWW
01
N60G
NDD01N60, NDT01N60
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coef-
ficient
Static Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance (Note 7)
Output Capacitance (Note 7)
Reverse Transfer Capacitance (Note 7)
Total Gate Charge (Note 7)
Gate-to-Source Charge (Note 7)
Gate-to-Drain Charge (Note 7)
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 8)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
SD
t
rr
t
a
t
b
Q
rr
V
GS
= 0 V, V
DD
= 30 V
I
S
= 1.0 A, d
i
/d
t
= 100 A/ms
I
S
= 0.4 A, V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
0.78
0.63
179
37
141
288
nC
ns
1.6
V
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 300 V, I
D
= 0.4 A,
V
GS
= 10 V, R
G
= 0
W
8.0
5.1
16.5
21.3
ns
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
GP
R
g
V
DS
= 300 V, I
D
= 0.4 A, V
GS
= 10 V
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 10 V, I
D
= 0.2 A
V
DS
= 15 V, I
D
= 0.2 A
V
DS
= V
GS
, I
D
= 50
mA
2.2
3.3
7.0
8.0
0.9
160
22
4.0
7.2
1.2
3.1
4.5
6.7
V
W
nC
8.5
3.7
V
mV/°C
W
S
pF
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C, I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
T
J
= 25°C
T
J
= 125°C
600
660
1
50
±100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCES
6. Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NDD01N60−1G
NDD01N60T4G
NDT01N60T1G
Package
IPAK
(Pb-Free, Halogen-Free)
DPAK
(Pb-Free, Halogen-Free)
SOT−223
(Pb-Free, Halogen-Free)
Shipping
†
75 Units / Rail
2500 / Tape & Reel
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
1.0
0.8
T
J
= 25°C
0.6
0.4
0.2
0
4.6 V
V
GS
= 10 V
5.5 V
2.0
4.8 V
I
D
, DRAIN CURRENT (A)
1.6
1.2
T
J
= 25°C
0.8
T
J
= 125°C
0.4
0
T
J
=
−55°C
V
DS
≥
25 V
I
D
, DRAIN CURRENT (A)
4.4 V
4.2 V
4.0 V
0
5
10
15
20
25
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
4
5
6
7
8
9
10
I
D
= 200 mA
T
J
= 25°C
16
14
12
10
8
6
Figure 2. Transfer Characteristics
V
GS
= 10 V
T
J
= 25°C
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
2.4
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.0
1.6
1.2
0.8
0.4
−50
10
I
D
= 200 mA
V
GS
= 10 V
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
1000
T
J
= 150°C
100
T
J
= 125°C
−25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
8
V
DS
6
4
2
0
V
DS
= 300 V
T
J
= 25°C
I
D
= 400 mA
0
1
2
3
4
5
6
7
8
Q
gs
Q
T
350
300
250
Q
gd
200
150
100
50
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
C
iss
10
C
oss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
1
1
10
C
rss
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DS
= 300 V
I
D
= 400 mA
V
GS
= 10 V
t, TIME (ns)
100
t
f
10
t
d(off)
t
r
1
t
d(on)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
10
V
GS
= 10 V
Single Pulse
T
C
= 25°C
T
J
= 150°C
10
10
ms
100
ms
1 ms
10 ms
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
100
dc
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
1
I
D
, DRAIN CURRENT (A)
R
DS(on)
Limit
Thermal Limit
Package Limit
1 ms
100
ms
1
10 ms
0.1
1000
0.01
V
GS
= 10 V
Single Pulse
T
C
= 25°C
T
J
= 150°C
0.1
1
10
dc
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area NDD01N60
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDT01N60
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4
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
10
50% Duty Cycle
R(t) (°C/W)
1 20%
10%
5%
2%
1%
Single Pulse
0.01
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Impedance (Junction−to−Case) for NDD01N60
100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
R(t) (°C/W)
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDT01N60
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