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IR2127PBF

产品描述MOSFET MOSFT 200V 76A 20mOhm 100nC Qg
产品类别模拟混合信号IC    驱动程序和接口   
文件大小192KB,共16页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准
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IR2127PBF概述

MOSFET MOSFT 200V 76A 20mOhm 100nC Qg

IR2127PBF规格参数

参数名称属性值
是否Rohs认证符合
包装说明DIP, DIP8,.3
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time12 weeks
高边驱动器YES
接口集成电路类型BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码R-PDIP-T8
长度9.88 mm
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
标称输出峰值电流0.5 A
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP8,.3
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
电源15 V
认证状态Not Qualified
座面最大高度5.33 mm
最大供电电压20 V
最小供电电压10 V
标称供电电压15 V
电源电压1-最大620 V
电源电压1-分钟7 V
表面贴装NO
技术CMOS
温度等级AUTOMOTIVE
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
断开时间0.2 µs
接通时间0.25 µs
宽度7.62 mm
Base Number Matches1

文档预览

下载PDF文档
Data Sheet No. PD60143-O
IR2127(S) / IR2128(S)
IR21271(S) & (PbF)
CURRENT SENSING SINGLE CHANNEL DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Application- specific gate drive range:
Motor Drive: 12 to 20V (IR2127/IR2128)
Automotive: 9 to 20V (IR21271)
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
FAULT
lead indicates shutdown has occured
Output in phase with input (IR2127/IR21271)
Output out of phase with input (IR2128)
Product Summary
V
OFFSET
I
O
+/-
V
OUT
V
CSth
t
on/off
(typ.)
600V max.
200 mA / 420 mA
(IR2127/IR2128)
Description
Avaliable in Lead-Free
12 - 20V
(IR21271)
9 - 20V
250 mV or 1.8V
200 & 150 ns
The IR2127/IR2128/IR21271(S) is a high voltage, high
speed power MOSFET and IGBT driver. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL outputs,
down to 3.3V. The protection circuity detects over-cur-
rent in the driven power transistor and terminates the
gate drive voltage. An open drain
FAULT
signal is pro-
vided to indicate that an over-current shutdown has oc-
curred. The output driver features a high pulse current
buffer stage designed for minimum cross-conduction.
The floating channel can be used to drive an N-chan-
nel power MOSFET or IGBT in the high side or low
side configuration which operates up to 600 volts.
Packages
8-Lead PDIP
8-Lead SOIC
Typical Connection
V
CC
IN
FAULT
COM
V
B
HO
CS
V
S
V
CC
IN
FAULT
IR2127/IR21271
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
V
CC
IN
FAULT
V
CC
IN
FAULT
COM
V
B
HO
CS
V
S
IR2128
www.irf.com
1

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