Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -60°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Package Thermal Characteristics
(Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
)
..........68°C/W
Junction-to-Case Thermal Resistance (θ
JC
)
...............11°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
IN
= 12V, C
GATE-SOURCE
= 1nF, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
Input Voltage Range
SYMBOL
V
IN
CONDITIONS
Operating range
Protection range
V
IN
= V
SRC
=
V
OUT
= 12V
V
IN
= V
SRC
=
V
OUT
= 30V
V
IN
= 12V
V
IN
= 30V
MIN
3
-36
224
260
34
64
136
240
TYP
MAX
30
+90
320
350
50
100
200
350
2.92
100
V
IN
rising
1.2
1.225
0.05 x
V
TH
0.9 x
V
IN
0.87 x
V
IN
0.7
1.2
1.25
µA
V
nA
V
V
V
V
kΩ
µA
UNITS
V
SHDN = high
Input Supply Current
I
IN
SHDN = low
SRC Input Current
IN Undervoltage Lockout
OVSET/UVSET Input Current
OVSET/UVSET Threshold (Rising)
OVSET/UVSET Threshold Hysteresis
POK Threshold Rising
POK Threshold Falling
TERM On-Resistance
I
SRC
V
UVLO
I
UVSET/OVSET
V
TH
V
TH-HYS
V
POK+
V
POK-
R
TERM
V
SRC
= V
IN
= 12V, SHDN = high
V
SRC
= V
IN
= 30V, SHDN = high
V
IN
rising
www.maximintegrated.com
Maxim Integrated
│
2
MAX16126/MAX16127
Load-Dump/Reverse-Voltage Protection Circuits
Electrical Characteristics (continued)
(V
IN
= 12V, C
GATE-SOURCE
= 1nF, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
Startup Response Time
Autoretry Timeout
GATE Rise Time
OVSET-to-GATE Propagation Delay
UVSET-to-GATE Propagation Delay
Output Input Resistance to GND
OVSET-to-FLAG Propagation Delay
SYMBOL
t
START
t
RETRY
t
RISE
t
OVG
t
UVG
R
OUT
t
OV
V
GATE
rising (GND to V
SRC
+ 8V)
V
OVSET
rising (V
TH
- 100mV to
V
TH
+ 100mV)
V
UVSET
falling (V
TH
+ 100mV to
V
TH
- 100mV)
MAX16126
MAX16127
V
OVSET
rising (V
TH
- 100mV to
V
TH
+ 100mV)
V
IN
= V
SRC
= V
OUT
= 3V,
I
GATE
= -1FA
GATE Output Voltage High Above
V
SRC
V
IN
= V
SRC
= V
OUT
= 12V,
I
GATE
= -1FA
V
IN
= V
SRC
= V
OUT
= 24V,
I
GATE
= -1FA
V
IN
= V
SRC
= V
OUT
= 30V,
I
GATE
= -1FA
GATE Pulldown Current
GATE Charge-Pump Current
Thermal Shutdown
Thermal-Shutdown Hysteresis
SHDN Logic-High Input Voltage
SHDN Logic-Low Input Voltage
SHDN Input Pulse Width
SHDN Input Pulldown Current
FLAG Output Voltage Low
FLAG Leakage Current
I
PD
I
GATE
T
+
δT
V
IH
V
IL
t
PW
I
SPD
V
OL
I
IL
FLAG sinking 1mA
V
FLAG
= 12V
6
0.8
1.2
0.4
0.5
1.4
0.4
V
GATE
= 12V
V
IN
= V
GATE
= V
SRC
= 12V
5
8
7
6.25
8.8
180
+145
15
20
4
2
0.3
5
9
8.5
8
5.5
10
V
10
9.5
mA
µA
°C
°C
V
V
µs
µA
V
µA
(Note 3)
CONDITIONS
MIN
TYP
150
150
1
0.55
MAX
UNITS
µs
ms
ms
µs
µs
MΩ
µs
V
GS
Note 2:
All parameters are production tested at T
A
= +25°C. Limits over the operating temperature range are guaranteed by design.
Note 3:
The MAX16126/MAX16127 power up with the external MOSFETs in off mode (V
GATE
= V
SRC
). The external MOSFETs turn
on t
START
after the IC is powered up and all input conditions are valid.
国际半导体设备材料产业协会（SEMI）昨（10）日公布半导体设备资本支出的年中预测报告（SEMI Capital Equipment Forecast），预估2012年全球半导体设备营收规模将达到423.8亿美元，2013年将成长至467.1亿美元。
受惠平板电脑、智慧型手机与行动装置等消费性电子商品亮丽表现，半导体设备的采购需求仍将持续。SEMI在报告中指出，2011年半...[详细]
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