d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
www.vishay.com
1
New Product
SiE862DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 s
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain Top)
Steady State
Maximum Junction-to-Case (Source)
a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
iss
C
oss
C
rss
Q
g
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 20 A
3100
610
215
48
23
8
6.8
1.4
30
20
40
15
12
12
35
15
pF
75
35
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 20 A
V
GS
= 4.5
V, I
D
= 20 A
V
DS
= 10 V, I
D
= 20 A
1.2
30
31
-6
1.65
V
mV/°C
2.2
± 100
1
10
0.0032
0.0038
V
nA
µA
A
0.0026
0.0034
90
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
25
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
R
g
f = 1 MHz
Gate Resistance
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, R
L
= 1.5
Ω
t
r
Rise Time
t
d(off)
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-Off Delay Time
t
f
Fall Time
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, R
L
= 1.5
Ω
t
r
Rise Time
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Drain-Source Body Diode Characteristics
T
C
= 25 °C
I
S
Continuous Source-Drain Diode Current
I
SM
Pulse Diode Forward Current
a
I
S
= 10 A
V
SD
Body Diode Voltage
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
t
a
Reverse Recovery Fall Time
t
b
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
nC
Ω
0.3
2.8
45
30
60
25
20
20
55
25
50
100
1.2
60
60
ns
A
V
ns
nC
ns
0.8
40
40
21
19
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
20
80
I
D
- Drain Current (A)
16
60
12
T
C
= - 55 °C
8
T
C
= 25 °C
4
T
C
= 125 °C
40
V
GS
= 3
V
20
V
GS
= 2
V
0.5
1.0
1.5
2.0
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0040
4000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.0035
C - Capacitance (pF)
V
GS
= 4.5
V
0.0030
V
GS
= 10
V
0.0025
3200
C
iss
2400
1600
C
oss
800
C
rss
0.0020
0.0015
0
20
40
60
80
100
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 7.5
V
6
V
DS
= 15
V
4
V
DS
= 24
V
2
R
DS(on)
- On-Resistance
1.6
1.8
I
D
= 20 A
Capacitance
V
GS
= 10
V
1.4
(Normalized)
V
GS
= 4.5
V
1.2
1.0
0.8
0
0
10
20
30
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
www.vishay.com
3
New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.008
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.006
T
J
= 125 °C
0.004
T
J
= 25 °C
0.002
10
T
J
= 150 °C
T
J
= 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.2
2.0
40
50
On-Resistance vs. Gate-to-Source Voltage
1.8
Po
w
er (
W
)
I
D
= 250
µA
V
GS(th)
(V)
1.6
1.4
1.2
30
20
10
1.0
0.8
- 50
0
0.01
- 25
0
25
50
75
100
125
150
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
0.01
T
A
= 25 °C
Single Pulse
0.001
0.01
0.1
1
BVDSS Limited
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
150
120
120
I
D
- Drain Current (A)
Po
w
er Dissipation (
W
)
100
80
90
60
60
Package Limited
40
30
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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