PD-96144A
IRF7750GPbF
HEXFET
®
Power MOSFET
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Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
V
DSS
= -20V
R
DS(on)
= 0.030Ω
Description
HEXFET
®
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
tional Rectifier is well known for,
provides the designer
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with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
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05/14/09
IRF7750GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
-0.45
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
0.012 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.030
V
GS
= -4.5V, I
D
= -4.7A
Ω
––– 0.055
V
GS
= -2.5V, I
D
= -3.8A
––– -1.2
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -4.7A
––– -1.0
V
DS
= -20V, V
GS
= 0V
µA
––– -25
V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
26
39
I
D
= -4.7A
3.9 5.8
nC
V
DS
= -16V
8.0
12
V
GS
= -5.0V
15 –––
V
DD
= -10V
54 –––
I
D
= -1.0A
ns
180 –––
R
D
= 10Ω
210 –––
R
G
= 24Ω
1700 –––
V
GS
= 0V
380 –––
pF
V
DS
= -15V
270 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
26
16
-1.0
A
-38
-1.2
39
24
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.0A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF7750GPbF
1000
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
1000
-I
D
, Drain-to-Source Current (A)
100
-I
D
, Drain-to-Source Current (A)
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
10
10
1
-1.50V
-1.50V
1
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
-I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
1
T
J
= 25
°
C
1
1.5
V DS = -15V
20µs PULSE WIDTH
2.0
2.5
3.0
-V
GS
, Gate-to-Source Voltage (V)
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
-V
SD
,Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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IRF7750GPbF
2500
2000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
-4.7A
V
DS
=-16V
8
C, Capacitance (pF)
Ciss
1500
6
1000
4
500
Coss
Crss
1
10
100
2
0
0
0
10
20
30
40
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1.00
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-V GS(th) , Variace ( V )
-I
D
, Drain Current (A)
I
0.80
100
10us
10
100us
1ms
1
10ms
0.60
ID = -250µA
0.40
0.20
-75
-50
-25
0
25
50
75
100 125
150
0.1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
T J , Temperature ( °C )
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Threshold Voltage Vs. Temperature
Fig 8.
Maximum Safe Operating Area
4
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IRF7750GPbF
5.0
20
4.0
16
-I
D
, Drain Current (A)
2.0
Power (W)
25
50
75
100
125
150
3.0
12
8
1.0
4
0.0
0
0.01
0.10
1.00
10.00
100.00
T
C
, Case Temperature ( °C)
Time (sec)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Typical Power Vs. Time
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
1
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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