d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
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1
SUD50P10-43L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 7.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 7.7 A
- 0.8
60
150
46
14
T
C
= 25 °C
- 50
- 40
- 1.2
90
225
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 50 V, R
L
= 6.5
Ω
I
D
≅
- 7.7 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
V
DD
= - 50 V, R
L
= 6.5
Ω
I
D
≅
- 7.7 A, V
GEN
= - 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 50 V, V
GS
= - 10 V, I
D
= - 9.2 A
V
DS
= - 50 V, V
GS
= - 4.5 V, I
D
= - 9.2 A
V
DS
= - 50 V, V
GS
= 0 V, f = 1 MHz
4600
230
175
106
54
14
26
4
15
20
110
100
42
160
100
100
25
30
165
150
65
240
150
150
ns
ns
Ω
160
81
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 100 V, V
GS
= 0 V
V
DS
= - 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 9.2 A
V
GS
= - 4.5 V, I
D
= - 7.7 A
V
DS
= - 15 V, I
D
= - 9.2 A
- 40
0.036
0.040
38
0.043
0.048
-1
- 100
- 109
5.9
-3
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
SUD50P10-43L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
35
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
30
25
20
15
10
3
V
5
0
0.0
2
V
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
4
25 °C
- 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
16
20
12
8
T
A
= 125 °C
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.044
7000
6000
R
DS(on)
- On-Resistance (Ω)
0.042
V
GS
= 4.5
V
0.040
C - Capacitance (pF)
5000
4000
3000
2000
1000
0.034
0
5
10
15
20
25
30
35
0
0
C
rss
10
Transfer Characteristics
C
iss
0.038
V
GS
= 10
V
0.036
C
oss
20
30
40
50
60
70
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 9.2 A
8
V
DS
= 50
V
6
V
DS
=
80 V
4
R
DS(on)
- On-Resistance
(Normalized)
2.3
I
D
= 9.2 A
2.0
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
1.7
V
GS
= 10
V,
4.5
V
1.4
1.1
2
0.8
0
0
20
40
60
80
100
120
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
SUD50P10-43L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.08
0.07
T
A
= 125 °C
0.06
I
S
- Source Current (A)
T
J
= 150 °C
10
0.05
0.04
T
A
= 25 °C
T
J
= 25 °C
0.03
1
0.0
0.02
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.4
2.2
2.0
I
D
= 250
µA
V
GS(th)
(V)
Power (W)
1.8
1.6
1.4
1.2
1.0
0.8
- 50
25
20
15
10
5
0
0.01
35
30
On-Resistance vs. Gate-to-Source Voltage
- 25
0
25
50
75
100
125
150
175
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
10 s
DC
0.01
1
10
100
1000
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
SUD50P10-43L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
140
120
40
I
D
- Drain Current (A)
100
30
Power
80
60
40
10
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
20
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
100
Single Pulse Power, Junction-to-Ambient
I
C
- Peak Avalanche Current (A)
10
T
A
1
0.000001
L
I
A
BV -
V
DD
0.00001
0.0001
0.001
0.01
T
A
- Time In Avalanche (s)
Single Pulse Avalance Capability
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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