VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
“Half Bridge” IGBT MTP (Ultrafast NPT IGBT), 80 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
Available
Available
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
• Al
2
O
3
DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
MTP
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
1200 V
3.36 V
80 A
8 kHz to 30 kHz
MTP
Half bridge
PRODUCT SUMMARY
V
CES
V
CE(on)
typical at V
GE
= 15 V
I
C
at T
C
= 25 °C
Speed
Package
Circuit
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation (only IGBT)
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 105 °C
T
C
= 25 °C
T
C
= 104 °C
TEST CONDITIONS
MAX.
1200
80
40
160
A
160
21
160
± 20
V
2500
463
W
185
UNITS
V
Revision: 28-Oct-16
Document Number: 94507
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter
breakdown voltage
Temperature coefficient of
breakdown voltage
SYMBOL
V
(BR)CES
V
(BR)CES
/T
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 3 mA (25 °C to 125 °C)
V
GE
= 15 V, I
C
= 40 A
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V, I
C
= 80 A
V
GE
= 15 V, I
C
= 40 A, T
J
= 150 °C
V
GE
= 15 V, I
C
= 80 A, T
J
= 150 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Transconductance
V
GE(th)
V
GE(th)
/T
J
g
fe
V
CE
= V
GE
, I
C
= 500 μA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
CE
= 50 V, I
C
= 40 A, PW = 80 μs
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 25 °C
Zero gate voltage collector current
I
CES
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
MIN.
1200
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+1.1
3.36
4.53
3.88
5.35
-
-12
35
-
0.4
0.2
-
MAX.
-
-
3.59
4.91
4.10
5.68
6
-
-
250
1.0
mA
10
± 250
nA
mV/°C
S
μA
V
UNITS
V
V/°C
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
C
ies
C
oes
C
res
RBSOA
I
C
= 40 A
V
CC
= 600 V
V
GE
= 15 V
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5
,
L = 200 μH, T
J
= 25 °C,
energy losses include tail and diode
reverse recovery
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5
,
L = 200 μH, T
J
= 125 °C,
energy losses include tail and diode
reverse recovery
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
T
J
= 150 °C, I
C
= 160 A
V
CC
= 1000 V, V
p
= 1200 V
R
g
= 5
,
V
GE
= + 15 V to 0 V
T
J
= 150 °C,
V
CC
= 900 V, V
p
= 1200 V
R
g
= 5
,
V
GE
= + 15 V to 0 V
10
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
399
43
187
1.14
1.35
2.49
1.60
1.62
3.22
5521
380
171
Fullsquare
MAX.
599
65
281
1.71
2.02
3.73
mJ
2.40
2.43
4.82
8282
570
257
pF
nC
UNITS
Short circuit safe operating area
SCSOA
-
-
μs
Revision: 28-Oct-16
Document Number: 94507
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
DIODE SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
I
C
= 40 A
I
C
= 80 A
Diode forward voltage drop
V
FM
I
C
= 40 A, T
J
= 125 °C
I
C
= 80 A, T
J
= 125 °C
I
C
= 40 A, T
J
= 150 °C
Reverse recovery energy of the diode
Diode reverse recovery time
Peak reverse recovery current
E
rec
t
rr
I
rr
V
GE
= 15 V, R
g
= 5
,
L = 200 μH
V
CC
= 600 V, I
C
= 40 A
T
J
= 125 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
TYP.
2.98
3.90
3.08
4.29
3.12
574
120
43
MAX.
3.38
4.41
3.39
4.72
3.42
861
180
65
μJ
ns
A
V
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
IGBT
Junction to case
Diode
Case to sink per module
Clearance
(1)
Creepage
(2)
Mounting torque to heatsink
Weight
R
thJC
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
Shortest distance along external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
SYMBOL
T
J
T
Stg
TEST CONDITIONS
MIN.
-40
-40
-
-
-
5.5
8
TYP.
-
-
-
-
0.06
-
-
3 ± 10 %
66
MAX.
150
°C
125
0.29
0.61
-
-
mm
-
Nm
g
°C/W
UNITS
Revision: 28-Oct-16
Document Number: 94507
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
1000
100
80
100
60
IC (A)
40
IC (A)
10
20
0
0
20
40
60
80
100 120 140 160
T C (°C)
1
10
100
VCE (V)
1000
10 000
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 4 - Reverse BIAS SOA
T
J
= 150 °C; V
GE
= 15 V
160
VGE = 18V
140
120
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
600
500
400
100
PD (W)
300
200
100
0
0
20
40
60
80
100 120 140 160
T C (°C)
ICE (A)
80
60
40
20
0
0
2
4
VCE (V)
6
8
10
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 5 - Typical IGBT Output Characteristics
T
J
= - 40 °C; t
p
= 80 μs
160
140
1000
100
120
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
10
IC (A)
10 μs
100 μs
80
60
40
20
1
10ms
0.1
DC
0.01
1
10
100
VCE (V)
1000
10000
0
0
2
4
6
VCE (V)
8
10
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
150 °C
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 80 μs
Revision: 28-Oct-16
Document Number: 94507
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
20
18
16
14
ICE = 80A
ICE = 40A
ICE = 20A
160
VGE = 18V
140
120
100
80
60
40
20
0
0
2
4
VCE (V)
6
8
10
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V CE (V)
ICE (A)
12
10
8
6
4
2
0
5
10
V GE (V)
15
20
Fig. 7 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 80 μs
20
-40°C
25°C
125°C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25 °C
120
100
80
18
16
14
V CE (V)
ICE = 80A
ICE = 40A
ICE = 20A
12
10
8
6
4
2
IF (A)
60
40
20
0
0.0
1.0
2.0
3.0
VF (V)
4.0
5.0
0
5
10
V GE (V)
15
20
Fig. 8 - Typical Diode Forward Characteristics
t
p
= 80 μs
20
18
16
14
V CE (V)
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 125 °C
350
ICE = 80A
ICE = 40A
ICE = 20A
300
250
ICE (A)
T J = 25°C
T J = 125°C
12
10
8
6
4
2
0
5
10
V GE (V)
15
20
200
150
100
50
0
0
5
10
VGE (V)
15
20
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= - 40 °C
Fig. 12 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
Revision: 28-Oct-16
Document Number: 94507
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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