4M
×
32 -Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
HYM 324020GD(L)-50/-60
Preliminary Information
•
•
•
72-Pin Small Outline Dual-in-Line Memory Module
4 0194 034 words by 32-bit organization
Performance:
t
RC
t
RAC
t
CAC
t
AA
t
PC
Read / Write Cycle Time
RAS Access Time
CAS Access Time
Access Time From Address
Fast Page Mode Cycle Time
-50
90
50
13
25
35
-60
110
60
15
30
40
ns
ns
ns
ns
ns
•
•
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 2880 mW active (-50 version)
max. 2592 mW active (-60 version)
LVTLL - 57.6 mw standby
LVCMOS– 28.8 mW standby
LVCMOS– 5.76 mW standby (L-version)
•
•
•
•
•
•
•
•
•
•
Fast Page Mode
Low Power Versions with Self Refresh
CAS-before-RAS refresh, RAS-only-refresh
8 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
Utilizes eight 4M
×
4 -DRAMs in TSOPII-packages
Card size 56.69mm x 25.40mm x 3.80 mm
12 / 10 Adressing (Row/Column)
4096 refresh cycles / 64 ms
Gold contact pad
Semiconductor Group
1
2.96
HYM324020GD(L)-50/-60
4M x 32 SO-DIMM
The HYM 324020GD(L) -50/-60 are 16 MByte DRAM 72pin small outline dual-in-line memory
modules organized as 4M x 32, comprising eight HYB3116400BT(L) 4M
×
4 DRAMs in 300 mil wide
TSOPII-26/24 - packages mounted together with eight 0.2
µF
ceramic decoupling capacitors on a
PC board. These modules are optimized for use in byte-write non-parity applications. Each HYB
3116400BT(L) is described in the data sheet and is fully electrically tested and processed according
to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a
further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
These modules are ideal for portable systems applications where high memory capacity is needed.
Ordering Information
Type
HYM 324020GD -50
HYM 324000GD -60
HYM 324020GDL -50
HYM 324000GDL -60
Pin Names
A0-A11
A0-A9
DQ0 - DQ31
RAS0, RAS2
CAS0 - CAS3
WE
Vcc
Vss
PD1 - PD7
N.C.
Presence-Detect Truth Table *):
Module
HYM 324000GD -50
HYM 324000GD -60
HYM 324000GDL -50
HYM 324000GDL -60
*) note:
PD1...PD4
PD5..PD6
PD7
PD1
NC
NC
NC
NC
PD2
NC
NC
NC
NC
PD3
VSS
VSS
VSS
VSS
PD4
NC
NC
NC
NC
PD5
VSS
NC
VSS
NC
PD6
VSS
NC
VSS
NC
PD7
NC
NC
VSS
VSS
Row Address Input
Column Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Power (+3.3 Volt)
Ground
Presence Detect Pins
No Connection
Ordering Code
Package
L-DIM-72-3
L-DIM-72-3
L-DIM-72-3
L-DIM-72-3
Descriptions
50 ns DRAM module
60 ns DRAM module
50 ns Low Power DRAM module
60 ns Low Power DRAM module
: configuration
: speed
: refresh mode
Semiconductor Group
2
HYM324020GD(L)-50/-60
4M x 32 SO-DIMM
Pin Configuration
PIN
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
Name
VSS
DQ1
DQ3
DQ5
DQ7
PD1
A1
A3
A5
A10
DQ8
DQ10
DQ12
DQ14
A11
A8
NC
DQ15
PIN
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
NAME
DQ16
VSS
CAS2
CAS1
NC
WRITE
DQ18
DQ20
DQ22
NC
DQ25
DQ28
VCC
DQ30
NC
PD3
PD5
PD7
PIN
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
NAME
DQ0
DQ2
DQ4
DQ6
VCC
A0
A2
A4
A6
NC
DQ9
DQ11
DQ13
A7
VCC
A9
RAS2
NC
PIN
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
NAME
DQ17
CAS0
CAS3
RAS0
NC
NC
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PD2
PD4
PD6
VSS
Pin2
Pin1
Pin72
Pin71
Front Side
Back Side
Semiconductor Group
3
HYM324020GD(L)-50/-60
4M x 32 SO-DIMM
RAS0
CAS0
DQ0-DQ3
CAS RAS
I/O1-I/O4
OE
D0
CAS RAS
I/O1-I/O4
OE
D1
DQ4-DQ7
CAS1
DQ8-DQ11
CAS RAS
I/O1-I/O4
OE
D2
CAS RAS
I/O1-I/O4
OE
D3
DQ12-DQ15
RAS2
CAS2
CAS RAS
I/O1-I/O4
OE
D4
CAS RAS
I/O1-I/O4
OE
D5
DQ16-DQ19
DQ20-DQ23
CAS3
CAS RAS
I/O1-I/O4
OE
D6
CAS RAS
I/O1-I/O4
D7
OE
DQ24-DQ27
DQ28-DQ31
A0R-A11R
A0C-A9C
WE
D0-D7
D0-D7
D0-D7
VCC
VSS
C0 - C7
Block Diagram
Semiconductor Group
4
HYM324020GD(L)-50/-60
4M x 32 SO-DIMM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (LVTTL)
Output „H“ level voltage (Iout = -2mA)
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
Input leakage current,any input
(0 V <
V
in < Vcc , all other pins = 0 V
Symbol
Limit Values
min.
max.
Vcc+0.3
0.8
–
0.4
-
0.2
10
10
2.0
– 0.3
2.4
–
Vcc-0.2
-
– 10
– 10
Unit Note
V
V
V
V
V
V
µA
µA
1)
1)
1)
1)
1)
!)
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
I
O(L)
I
CC1
-50 ns version
-60 ns version
Output leakage current
(DO is disabled, 0 V <
Vout
< Vcc )
Average
Vcc
supply current:
–
–
800
720
16
mA
mA
mA
2) 3)
4)
–
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS=
V
ih)
I
CC2
–
I
CC3
Average
V
cc supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
(RAS cycling: CAS =
V
IH: tRC = tRC min.)
–
–
800
720
mA
mA
2) 3)
Semiconductor Group
5
stm32/stm8
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