VS-ST183C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• International standard case A-PUK (TO-200AB)
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
A-PUK (TO-200AB)
• High speed performance
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
A-PUK (TO-200AB)
Single SCR
370 A
400 V, 800 V
1.80 V
4900 A
5130 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
370
55
690
25
4900
5130
120
110
400 to 800
10 to 20
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
40
VS-ST183C..C
Revision: 28-Aug-17
Document Number: 94368
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
770
730
600
350
50
V
DRM
50
40
47/0.22
660
600
490
270
1220
1270
1210
860
50
V
DRM
-
1160
1090
1040
730
5450
2760
1600
800
50
V
DRM
-
4960
2420
1370
680
V
A/μs
55
47/0.22
°C
μF
A
55
40
47/0.22
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
370 (130)
55 (85)
690
4900
5130
4120
Sinusoidal half wave,
initial T
J
= T
J
maximum
4310
120
110
85
78
1200
1.80
1.40
1.45
0.67
0.58
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: See table in device code
VALUES
1000
1.1
10
20
μs
UNITS
A/μs
Revision: 28-Aug-17
Document Number: 94368
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183C Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
40
UNITS
V/μs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
50
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
A-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.015
0.018
0.024
0.035
0.060
DOUBLE SIDE
0.016
0.019
0.024
0.035
0.060
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
DOUBLE SIDE
0.011
0.019
0.026
0.037
0.061
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 28-Aug-17
Document Number: 94368
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183C Series
www.vishay.com
Vishay Semiconductors
130
ST183C..C Series
(Double side cooled)
R
thJC
(DC) = 0.08 K/W
130
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
0
40
80
30°
ST183C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
120
110
100
90
80
70
60
50
40
30
20
240
0
100
200
300
Ø
Ø
Conduction angle
Conduction period
60°
90°
180°
120°
90°
30°
60°
120°
400
180°
DC
120
160
200
500
600
700
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
130
120
1000
Maximum Allowable
Heatsink Temperature (°C)
110
100
90
80
70
60
50
40
30
20
0
50
100
150
Maximum Average
On-State Power Loss (W)
ST183C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
900
800
700
600
500
400
300
200
100
0
400
0
50
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
Ø
30° 60° 90°
120° 180°
DC
Conduction angle
ST183C..C Series
T
J
= 125 °C
100 150 200 250 300 350 400 450
200
250
300
350
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
130
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
Maximum Allowable
Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
30°
40
30
0
50
Maximum Average
On-State Power Loss (W)
ST183C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
1400
1200
1000
800
600
400
200
0
0
100
Ø
DC
180°
120°
90°
60°
30°
RMS limit
Conduction angle
Ø
60°
90°
180°
120°
Conduction period
ST183C..C Series
T
J
= 125 °C
200
300
400
500
600
700
100 150 200 250 300 350 400 450
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 28-Aug-17
Document Number: 94368
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST183C Series
www.vishay.com
Vishay Semiconductors
1
4500
Peak Half Sine Wave On-State
Current (A)
4000
Z
thJ-hs
- Transient
Themal Impedance (K/W)
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
ST183C..C Series
0.1
3500
3000
0.01
2500
ST183C..C Series
2000
1
10
100
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
0.01
0.1
1
10
0.001
0.001
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJC
Characteristics
5000
4500
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
250
Q
rr
- Maximum Reverse Recovery
Charge (µC)
Peak Half Sine Wave
On-State Current (A)
200
ST183C..C Series
T
J
= 125 °C
I
TM
= 500 A
300 A
200 A
4000
3500
3000
2500
2000
0.01
150
100 A
100
50 A
50
ST183C..C Series
0
0.1
1
0
20
40
60
80
100
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Instantaneous On-State Voltage (A)
10 000
ST183C..C Series
160
140
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
I
rr
- Maximum Reverse
Recovery Current (A)
120
100
80
60
40
20
0
0
1000
T
J
= 25 °C
T
J
= 125 °C
100
1
1.5
2
2.5
3
3.5
4
4.5
ST183C..C Series
T
J
= 125 °C
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
Revision: 28-Aug-17
Document Number: 94368
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
