GS71024T/U
TQFP, FP-BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 8, 9, 10, 12, 15 ns
• CMOS low power operation: 190/170/160/130/110 mA at
minimum cycle time.
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40 to 85°C
• Package
T: 100-pin TQFP package
U: 6 mm x 8 mm Fine Pitch Ball Grid Array
GT: Pb-Free 100-pin TQFP available
64K x 24
1.5Mb Asynchronous SRAM
8, 9, 10, 12, 15 ns
3.3 V V
DD
Center V
DD
and V
SS
n—
Di
sco
nt
inu
ed
Pr
od
u
A
1
2
3
ct
4
Fine Pitch BGA Bump Configuration
5
6
DQ
DQ
DQ
A
3
A
2
A
1
A
0
DQ
DQ
DQ
DQ
DQ
DQ
A
12
DQ
DQ
DQ
V
DD
V
SS
DQ
DQ
DQ
B
DQ
DQ
CE2
CE1
A
5
A
7
WE
OE
A
4
A
6
A
8
C
D
E
F
V
SS
DQ
DQ
V
DD
DQ
DQ
DQ
Description
The GS71024 is a high speed CMOS static RAM organized as
65,536 words by 24 bits. Static design eliminates the need for
external clocks or timing strobes. The GS71024 operates on a
single 3.3 V power supply, and all inputs and outputs are TTL-
compatible. The GS71024 is available in a 6 mm x 8 mm Fine
Pitch BGA package, as well as in a 100-pin TQFP package.
DQ
DQ
A
9
G
H
A
11
A
14
A
10
A
13
A
15
Symbol
A
0
to A
15
X/Y
WE
CE1, CE2
V
DD
Description
Address input
Vector Input
Ne
w
Pin Descriptions
De
sig
6 mm x 8 mm, 0.75 mm Bump Pitch
Top View
Symbol
DQ
1
to DQ
24
V/S
OE
—
V
SS
Description
Data input/output
Address Multiplexer Control
Output enable input
—
Ground
me
nd
ed
for
Re
co
m
A0
Write enable input
Chip enable input
+3.3 V power supply
Block Diagram
Row
Decoder
Memory Array
1024 x 1536
Address
Input
A14
A15
X/Y
V/S
CE1
CE2
WE
OE
No
t
0
1
Q
Column
Decoder
Control
I/O Buffer
DQ1
DQ24
Rev: 1.05 11/2004
1/13
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71024T/U
100-Pin TQFP Pinout
A
A
CE1
CE2
NC
NC
NC
X/Y
V/S
V
DD
V
SS
NC
WE
NC
OE
NC
NC
NC
A
0
A
1
Re
c
NC
o
m
DQ
DQ
V
DD
V
SS
DQ
DQ
DQ
DQ
NC
NC
NC
NC
NC
me
nd
ed
for
Ne
w
De
sig
NC
V
SS
A
A
A
A
A
A
NC
NC
V
SS
V
DD
Rev: 1.05 11/2004
No
t
2/13
NC
NC
A
A
A
A
A
A
NC
n—
Di
sco
nt
inu
ed
Pr
od
u
NC
NC
NC
NC
NC
DQ
DQ
DQ
DQ
V
SS
V
DD
DQ
DQ
NC
V
DD
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
Top View
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
ct
NC
NC
NC
NC
NC
DQ
DQ
DQ
DQ
V
SS
V
DD
DQ
DQ
V
SS
NC
V
DD
NC
DQ
DQ
V
DD
V
SS
DQ
DQ
DQ
DQ
NC
NC
NC
NC
NC
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71024T/U
Truth Table
CE1
H
X
L
L
L
L
L
X: “H” or “L”
CE2
X
L
H
H
H
H
H
OE
X
X
L
L
X
X
H
WE
X
X
H
H
L
L
H
V/S
X
X
H
L
H
L
X
Mode
Not selected
Not selected
Read using X/Y
Read using A15
Write using X/Y
Write using A15
Output disable
DQ0 to DQ23
High Z
High Z
V
DD
Current
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable TQFP power dissipation
Allowable FPBGA power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
PD
Rating
De
sig
–0.5 to +4.6
–0.5 to V
DD
+ 0.5
(≤ 4.6 V max.)
–0.5 to V
DD
+ 0.5
(≤ 4.6 V max.)
1
1
–55 to 150
Ne
w
me
nd
ed
for
T
STG
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.05 11/2004
No
t
Re
co
m
3/13
n—
Di
sco
nt
inu
ed
Pr
od
u
Data Out
Data Out
Data In
I
DD
Data In
High Z
Unit
V
V
V
W
W
o
C
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
© 1999, GSI Technology
ISB1, ISB2
GS71024T/U
Recommended Operating Conditions
Parameter
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
DD
V
IH
V
IL
T
Ac
T
Ai
Minimum
3.0
3.135
2.0
Typical
3.3
3.3
—
Maximum
3.6
Unit
V
V
V
V
o
n—
Di
sco
nt
inu
ed
Pr
od
u
–0.3
0
—
—
V
DD
+ 0.3
0.8
70
ct
3.6
85
C
–40
—
o
C
Notes:
1. Input overshoot voltage should be less than V
DD
+ 2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
OUT
De
sig
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Maximum
5
7
Unit
pF
pF
DC I/O Pin Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
me
nd
ed
for
Symbol
I
IL
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested
Ne
w
Test Conditions
V
IN
= 0 to V
DD
Minimum
–1uA
–1uA
2.4
—
Maximum
1uA
1uA
—
0.4 V
Re
co
m
I
OL
V
OH
V
OL
Output High Z, V
OUT
= 0
to V
DD
I
OH
= –4mA
I
OL
= +4mA
Rev: 1.05 11/2004
No
t
4/13
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71024T/U
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
= 2.4 V
Output Load 1
DQ
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
n—
Di
sco
nt
inu
ed
Pr
od
u
DQ
0 to 70°C
10 ns
12 ns
15 ns
9 ns
V
IL
= 0.4 V
Output Load 2
3.3 V
589Ω
434Ω
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
De
sig
Power Supply Currents
Parameter
Symbol
Test Conditions
CE
≤
V
IL
All other inputs
≥
V
IH
or
≤
V
IL
Min. cycle time
I
OUT
= 0 mA
ct
5pF
1
10 ns
170 mA
160 mA
130 mA
110 mA
165 mA
45 mA
40 mA
35 mA
30 mA
45 mA
10 mA
5/13
50Ω
30pF
1
VT = 1.4 V
-40 to 85°C
12 ns
15 ns
Standby
Current
I
SB1
me
nd
ed
for
Operating
Supply
Current
I
DD
Ne
w
190 mA
8 ns
135 mA
115 mA
CE
≥
V
IH
All other inputs
≥
V
IH
or
≤V
IL
Min. cycle time
45 mA
40 mA
35 mA
Standby
Current
I
SB2
Re
co
m
CE
≥
V
DD
– 0.2 V
All other inputs
≥
V
DD
– 0.2 V or
≤
0.2 V
15 mA
Rev: 1.05 11/2004
No
t
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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