Ordering number : ENA1243C
CPH6444
N-Channel Power MOSFET
60V, 4.5A, 78m
Ω
, Single CPH6
Features
•
•
http://onsemi.com
Low ON-resistance
4V drive
•
•
Protection diode in
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
2
Conditions
Ratings
60
±20
4.5
18
1.6
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-003
2.9
0.6
6
5
4
0.2
0.15
Ordering & Package Information
Device
CPH6444-TL-W
Package
CPH6
SC-74, SOT-26, SOT-457
Shipping
3,000
pcs./reel
memo
Pb-Free
and
Halogen Free
CPH6444-TL-W
Packing Type: TL
Marking
2.8
1.6
0.05
ZW
0.4
0.6
1
2
0.95
3
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
TL
0.2
0.9
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71013 TKIM TC-00002972/62712 TKIM/22509 MSIM/61808PE TIIM TC-00001431 No. A1243-1/6
LOT No.
CPH6444
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=4.5A, VGS=0V
VDS=30V, VGS=10V, ID=4.5A
See specified Test Circuit.
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
Ratings
min
60
1
±10
1.2
1.8
3
60
74
81
505
57
37
7.3
9.8
40
24
10
1.6
2.1
0.83
1.2
78
104
114
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
10V
0V
VIN
VDD=30V
ID=2A
RL=15Ω
VOUT
D
PW=10μs
D.C.≤1%
G
CPH6444
P.G
50Ω
S
No. A1243-2/6
CPH6444
7.0V
4.5
4.0
3.5
ID -- VDS
V
4
.0V
6.0
5.5
5.0
ID -- VGS
VDS=10V
15.0
V
10.0V
4.5
3.5
V
Drain Current, ID -- A
3.0
2.5
2.0
1.5
1.0
0.5
0
0
3.0V
Drain Current, ID -- A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Ta=
7
0
0.5
1.0
1.5
2.0
2.5
--25
3.0
°
C
VGS=2.5V
5
°
C
25
°
C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
3.5
4.0
Drain to Source Voltage, VDS -- V
170
160
IT13789
160
150
RDS(on) -- VGS
Gate to Source Voltage, VGS -- V
IT13790
RDS(on) -- Ta
Ta=25
°
C
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
ID=1A
2A
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
150
140
130
120
110
100
90
80
70
60
50
40
30
0
2
4
6
8
10
12
14
16
140
130
120
110
100
90
80
70
60
50
40
30
20
--60
=4
GS
V
A
=1
, ID
A
=2
.5V
ID
=4
,
V GS
10.0V
=
V
GS
=1
I
V,
D
.0
A
--40
--20
0
20
40
60
80
100
120
140
160
Gate to Source Voltage, VGS -- V
7
IT13791
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Ambient Temperature, Ta --
°C
IT13792
|
y
fs
|
-- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
2
VDS=10V
1.0
7
5
3
2
Ta
°
-25
=-
7
C
°
C
25
0.1
7
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT13793
0.01
0.2
0.4
Ta=7
5
°
C
25
°
C
--25
°
C
0.6
0.8
C
5
°
Source Current, IS -- A
1.0
1.2
IT13794
Drain Current, ID -- A
7
5
SW Time -- ID
td(off)
1000
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=30V
VGS=10V
Ciss, Coss, Crss -- pF
7
5
3
2
Ciss
Switching Time, SW Time -- ns
3
tf
2
100
7
5
3
2
10
td(on)
7
5
Coss
tr
Crss
3
2
0.1
10
2
3
5
7
1.0
2
3
5
7
0
10
20
30
40
50
60
IT13796
Drain Current, ID -- A
IT13795
Drain to Source Voltage, VDS -- V
No. A1243-3/6
CPH6444
10
9
VGS -- Qg
VDS=30V
ID=4.5A
Drain Current, ID -- A
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=18A(PW≤10
μ
s)
ID=4.5A
Gate to Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
DC
Operation in this area
is limited by RDS(on).
op
era
t
10
0
1m
μ
s
s
10
ms
10
0m
s
ion
(Ta
=2
5
°
C
)
0.01
0.1
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm
2
✕0.8mm)
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
1.8
IT13797
PD -- Ta
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
Drain to Source Voltage, VDS -- V
5 7 100
IT13798
Allowable Power Dissipation, PD -- W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
IT13788
No. A1243-4/6
CPH6444
Outline Drawing
CPH6444-TL-W
Mass (g) Unit
0.015 mm
* For reference
Land Pattern Example
Unit: mm
0.6
1.4
0.95
0.95
2.4
No. A1243-5/6
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