TGF2961-SD
1 Watt DC-4 GHz Packaged HFET
Key Features
•
Frequency Range: DC-4 GHz
Nominal 900 MHz Application Board Performance:
•
TOI: 44 dBm
•
31 dBm Psat, 30 dBm P1dB
•
Gain: 18 dB
•
Input Return Loss: -15 dB
•
Output Return Loss: -7 dB
•
Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V
(Typical)
•
Package Dimensions: 4.5 x 4 x 1.5 mm
900 MHz Application Board
Performance
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
Primary Applications
20
15
20
Gain (dB)
15
Gain
IRL
ORL
5
0
-5
-10
-15
IRL and ORL (dB)
10
•
•
•
•
•
Cellular Base Stations
WiMAX
Wireless Infrastructure
IF & LO Buffer Applications
RFID
Product Description
The TGF2961-SD is a high performance 1-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 200 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 18 dB of gain, 30 dBm of
saturated output power, and 44 dBm of output IP3
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant
10
5
0.6
0.7
0.8
0.9
1
1.1
1.2
Frequency (GHz)
31
-20
Psat (dBm)
30
29
0.86
0.87
0.88
0.89
0.91
0.92
0.93
0.94
0.95
0.96
0.97
0.9
Freq (GHz)
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
September 2010 © Rev B
1
Table I
Absolute Maximum Ratings 1/
Symbol
Vd-Vg
Vd
Vg
Id
Ig
Pin
Tchannel
TGF2961-SD
Notes
Parameter
Drain to Gate Voltage
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current Range
Input Continuous Wave Power
Channel Temperature
Value
17 V
9V
-5 to 0 V
780 mA
-2.4 to 17.8 mA
29 dBm
200 °
C
2/
2/
2/
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
2/
Table II
Recommended Operating Conditions
Symbol
Vd
Idq
Id
Vg
Drain Voltage
Drain Current
Drain Current at Psat
Gate Voltage
Parameter 1/
Typical Value
8V
200 mA
260 mA
-1.0 V
1/
See assembly diagram for bias instructions.
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
September 2010 © Rev B
TGF2961-SD
Table III
Electrical Performance
Test conditions unless otherwise specified:
f
in
= 900 MHz, 25°C; Vd = 8V, Idq = 200
mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation
SYMBOL
Gain
P1dB
OTOI
PARAMETER
Small Signal Gain
Output Power @ 1dB Compression
3
rd
Order Output Intercept Point 1/
Min
19
29.0
39.5
Nom
20
30.5
42.5
UNIT
dB
dBm
dBm
1/ 900 and 910 MHz, 18 dBm output power per tone
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
September 2010 © Rev B
TGF2961-SD
Table IIIa
RF Characterization Table
Bias: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V, typical
SYMBOL
Gain
PARAMETER
Small Signal Gain
TEST CONDITIONS
900 MHz
1900 MHz
2100 MHz
900 MHz
1900 MHz
2100 MHz
900 MHz
1900 MHz
2100 MHz
900 MHz
1900 MHz
2100 MHz
900 MHz
1900 MHz
2100 MHz
900 MHz
1900 MHz
2100 MHz
900 MHz
1900 MHz
2100 MHz
NOMINAL
20
15
15
-15
-15
-15
-6
-6
-6
31
31
31
30.5
30
30
42.5
42.5
42.5
3.3
4.3
4.3
UNITS
dB
NOTES
1/
2/
3/
1/
2/
3/
1/
2/
3/
1/
2/
3/
1/
2/
3/
1/
2/
3/
1/
2/
3/
IRL
Input Return Loss
dB
ORL
Output Return Loss
dB
Psat
Saturated Output
Power
Output Power @ 1dB
Compression
Output TOI
dBm
P1dB
dBm
TOI
dBm
NF
Noise Figure
dB
1/
2/
3/
Using 900 MHz Application Board.
Using 1900 MHz Application Board
Using 2100 MHz Application Board
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
September 2010 © Rev B
TGF2961-SD
Table IV
Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 70°C
Value
Pd = 2.7 W
Tchannel = 175°C
Tm = 8.7E+06 Hrs
θjc
= 39 (°C/W)
Tchannel = 147°C
Tm = 1.86E+08 Hrs
θjc
= 39 (°C/W)
Tchannel = 127°C
Tm = 2.27E+09 Hrs
Notes
1/ 2/
Thermal Resistance,
θjc
Vd = 8 V
Id = 200 mA
Pd = 1.6 W
Tbaseplate = 85°C
Vd = 8 V
Id = 260 mA
Pout = 30 dBm
Pd = 1.08 W
Tbaseplate = 85°C
Thermal Resistance,
θjc
Under RF Drive
Mounting Temperature
Storage Temperature
1/
See ‘Typical Solder Reflow Profiles’ Table
-65 to 150°C
For a median life of 8.7E6 hours, Power Dissipation is limited to
Pd(max) = (175°C – Tbase°C) /
θjc
2/
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
Power De-Rating Curve
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
September 2010 © Rev B
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