PD - 97426
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (ON)
Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
IRGP4069PbF
IRGP4069-EPbF
C
V
CES
= 600V
I
C(Nominal)
= 35A
G
E
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
V
CE(on)
typ. = 1.6V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
C
C
GC
E
TO-247AC
IRGP4069PbF
E
GC
TO-247AD
IRGP4069-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
600
76
50
35
105
140
±20
±30
268
134
-55 to +175
Units
V
c
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Thermal Resistance Junction-to-Case
f
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.56
–––
40
Units
°C/W
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
www.irf.com
10/02/09
IRGP4069PbF/IRGP4069-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
Typ.
—
1.3
1.6
1.9
2.0
—
-18
25
1.0
770
—
Max.
—
—
1.85
—
—
6.5
—
—
20
—
±100
Units
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
d
= 150°C
d
= 175°C
d
mV/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
V
I
C
= 35A, V
GE
= 15V, T
J
I
C
= 35A, V
GE
= 15V, T
J
V
CE
= V
GE
, I
C
= 1.0mA
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
gfe
I
CES
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
V
CE
= 50V, I
C
= 35A, PW = 60μs
S
μA
nA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
69
18
29
390
632
1022
46
33
105
44
1013
929
1942
43
35
127
61
2113
197
65
Max.
104
27
44
508
753
1261
56
42
117
54
—
—
—
—
—
—
—
—
—
—
Units
I
C
= 35A
nC
V
GE
= 15V
V
CC
= 400V
Conditions
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
I
C
= 35A, V
CC
= 400V, V
GE
=15V
μJ
R
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH, L
S
= 150nH
T
J
= 175°C
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 140A
V
CC
= 480V, Vp =600V
Rg = 10Ω, V
GE
= +20V to 0V
FULL SQUARE
5
—
—
μs
V
CC
= 400V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 19μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
2
www.irf.com
IRGP4069PbF/IRGP4069-EPbF
80
70
60
50
40
30
20
10
0
25
50
75
100
T C (°C)
125
150
175
300
250
200
Ptot (W)
IC (A)
150
100
50
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100μsec
10μsec
100
IC (A)
10
1msec
DC
IC (A)
10
1
1000
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
140
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
ICE (A)
80
60
40
20
0
0
2
4
VGE = 10V
VGE = 8.0V
6
8
10
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60μs
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60μs
VCE (V)
www.irf.com
3
IRGP4069PbF/IRGP4069-EPbF
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
18
16
14
VCE (V)
ICE (A)
80
60
40
20
0
0
12
10
8
6
4
2
0
ICE = 18A
ICE = 35A
ICE = 70A
2
4
6
8
10
5
10
VGE (V)
15
20
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60μs
20
18
16
14
20
18
16
14
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
VCE (V)
VCE (V)
12
10
8
6
4
2
0
5
10
ICE = 18A
ICE = 35A
ICE = 70A
12
10
8
6
4
2
0
ICE = 18A
ICE = 35A
ICE = 70A
15
VGE (V)
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
140
IC, Collector-to-Emitter Current (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 175°C
4000
3500
120
100
80
60
40
20
0
4
5
6
7
8
9
10 11 12 13 14
VGE, Gate-to-Emitter Voltage (V)
T J = 175°C
TJ = 25°C
3000
Energy (μJ)
2500
2000
1500
1000
500
0
0
10
20
30
EON
EOFF
40
50
60
70
IC (A)
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
Fig. 12
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
4
www.irf.com
IRGP4069PbF/IRGP4069-EPbF
1000
3000
2500
Swiching Time (ns)
EON
Energy (μJ)
tdOFF
100
tF
2000
EOFF
1500
tdON
tR
10
0
10
20
30
40
50
60
70
IC (A)
1000
500
0
25
50
Rg (Ω)
75
100
Fig. 13
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
Fig. 14
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
20
Isc
15
300
Swiching Time (ns)
Tsc
225
Current (A)
Time (μs)
tdOFF
100
tF
10
150
tdON
5
tR
10
0
10
20
30
40
50
RG (Ω)
75
0
8
10
12
14
16
18
VGE (V)
0
Fig. 15
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
10000
Fig. 16
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
Cies
Capacitance (pF)
1000
100
Coes
Cres
10
0
100
200
300
400
500
VCE (V)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
www.irf.com
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
