VS-SD300N/R Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 380 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC
®
types
• Compression bonded encapsulations
DO-205AB (DO-9)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
380 A
DO-205AB (DO-9)
Single diode
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VS-SD300N/R
16 to 20
380
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
100
595
6050
6335
183
167
1600 to 2000
-40 to +180
25 to 32
380
70
425
6050
6335
183
167
2500 to 3200
-40 to +150
kA
2
s
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
16
20
VS-SD300N/R
25
28
32
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
2000
2500
2800
3200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
2100
2600
2900
3300
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 22-Jun-17
Document Number: 93545
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-SD300N/R Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD300N/R
16 to 20
380
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
100
300
125
Maximum RMS forward current
I
F(RMS)
DC at T
C
= 88 °C (02 to 24), T
C
= 91 °C (25 to 32)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
595
6050
6335
5090
Sinusoidal half wave,
initial
T
J
= T
J
maximum
5330
183
167
129
118
1830
0.95
1.05
0.75
0.66
1.83
1.83
V
mΩ
kA
2
√s
V
kA
2
s
A
25 to 32
270
100
380
70
425
UNITS
A
°C
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
),
T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
),
T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1180 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
Approximate weight
Case style
See dimensions (link at the end of datasheet)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat, and greased
Not-lubricated threads
TEST CONDITIONS
SD300N/R
16 to 20
25 to 32
UNITS
-40 to 180 -40 to 150
-55 to 200
0.11
°C
K/W
0.04
27
250
DO-205AB (DO-9)
Nm
g
Revision: 22-Jun-17
Document Number: 93545
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD300N/R Series
www.vishay.com
Vishay Semiconductors
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.019
0.023
0.028
0.042
0.073
RECTANGULAR CONDUCTION
0.013
0.023
0.030
0.044
0.074
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case T
emperature (°C)
170
160
150
140
130
120
110
100
90
80
0
S
D300N/ RS
eries(1600V to 2000V)
R
thJC
(DC) = 0.11 K/ W
Maximum Allowable Case T
emperature (°C)
180
150
140
130
S
D300N/ R S
eries (2500V to 3200V)
R
thJC
(DC) = 0.11 K/ W
Conduction Angle
Conduction Angle
30°
120
110
100
30°
90
0
50
100
150
200
250
300
Average Forward Current (A)
90°
60°
90°
120°
180°
60°
120°
180°
50 100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Cas T
e emperature (°C)
Maximum Allowable Case T
emperature (°C)
180
170
160
150
140
Conduction Period
S
D300N/ RS
eries(1600V to 2000V)
R
thJC
(DC) = 0.11 K/ W
150
140
130
120
110
100
90
80
0
S
D300N/ R S
eries (2500V to 3200V)
R
thJC
(DC) = 0.11 K/ W
Conduction Period
130
120
110
100
90
80
0
100
200 300
400
500
600
700
Average Forward Current (A)
30°
90°
60° 120°
30°
60°
90°
120°
180°
100
200
300
DC
400
500
180°
DC
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Revision: 22-Jun-17
Document Number: 93545
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD300N/R Series
www.vishay.com
Vishay Semiconductors
Maximum Average F
orward Power Los (W)
s
700
600
500
400
180°
120°
90°
60°
30°
R
th
06
0.
K/
W
0.
1
A
S
W
K/
=
03
0.
W
K/
ta
el
-D
RMSLimit
0.2
K/
W
R
300
Conduc tion Angle
0.4
K/ W
200
100
0.6 K
/
W
S
D300N/ R S
eries
(1600V to 2000V)
T = 180°C
J
0
0.8 K/
W
2 K/ W
0
50 100 150 200 250 300 350 400 40
20
Average Forward Current (A)
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Maximum Average F
orward Power L s (W)
os
900
800
700
600
500
400
300
200
100
0
0
100
200
300
400
500
Average Forward Current (A)
RMSLimit
Conduction Period
DC
180°
120°
90°
60°
30°
R
th
SA
=
0.
06
0.1
K/
W
0.
03
K/
W
K/
W
-D
el
ta
R
0.2
K/ W
0.4
K/
W
S
D300N/ R S
eries
(1600V to 2000V)
T = 180°C
J
0.6 K
/
W
0.8 K/
W
2 K/ W
600 40
20
60
80 100 120 140 160 180
Maximum Allowable Ambient T
emperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Maximum Average Forward Pow er Loss (W)
700
R
t
600
500
400
180°
120°
90°
60°
30°
A
hS
=
RMSLimit
K/
W
0.1
K/
W
0.
06
02
0.
W
K/
-D
ta
el
R
0.2
K/ W
300
200
100
0
0
25
50 100 150 200 250 300 350 400
Average Forward Current (A)
50
75
100
125
150
Maximum Allowable Ambient T
emperature (°C)
Conduction Angle
0.4
K/
0.8 K
/
W
S
D300N/ R S
eries
(2500V to 3200V)
T = 150°C
J
W
1.8 K/ W
Fig. 7 - Forward Power Loss Characteristics
Revision: 22-Jun-17
Document Number: 93545
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD300N/R Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Pow er L (W)
oss
900
800
700
600
500
400
RMS Limit
Conduction Period
DC
180°
120°
90°
60°
30°
R
SA
th
=
0.0
6K
/W
0.1
K/
W
0.
02
K/
W
-D
el
ta
R
300
200
100
0.2
K/ W
S
D300N/ R S
eries
(2500V to 3200V)
T = 150°C
J
0.4 K
/W
0.8 K
/
W
1.8 K/ W
0
0
100
200
300
400
500
25
600
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Peak Half S Wave F
ine
orward Current (A)
Peak Half S Wave F
ine
orward Current (A)
5500
5000
4500
4000
3500
3000
2500
2000
1500
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = T max.
J
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = T max.
J
J
No Voltage Reapplied
Rated V
RRM
Reapplied
S
D300N/ R S
eries
S
D300N/ R S
eries
10
100
1000
0.01
0.1
Pulse T
rain Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
10000
Instantaneous Forward Current (A)
T = 25°C
J
1000
T = T
J
max.
J
S
D300N/ R S
eries
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 11 - Forward Voltage Drop Characteristics
Revision: 22-Jun-17
Document Number: 93545
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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