SUP/SUB65P04-15
New Product
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
–40
0.023 @ V
GS
= –4.5 V
–50
r
DS(on)
(W)
0.015 @ V
GS
= –10 V
I
D
(A)
–65
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP65P04-15
SUB65P04-15
P-Channel MOSFET
D S
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
b
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
–40
"20
–65
–37
Unit
V
A
–240
–60
180
120
c
W
3.75
–55 to 175
_C
mJ
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
b
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
Document Number: 71174
S-00831—Rev. A, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
R
thJC
62.5
1.25
Symbol
R
thJA
Limit
40
Unit
_C/W
2-1
SUP/SUB65P04-15
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –40 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –40 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –30 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –10 V, I
D
= –30 A, T
J
= 125_C
V
GS
= –10 V, I
D
= –30 A, T
J
= 175_C
V
GS
= –4.5 V, I
D
= –20 A
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –50 A
20
0.018
–120
0.012
0.015
0.024
0.030
0.023
W
S
W
–40
V
–1
–3
"100
–1
–50
–250
A
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –20 V, R
L
= 0.3
W
,
I
D
]
–65 A, V
GEN
= –10 V, R
G
= 2.5
W
V
DS
= –20 V V
GS
= –10 V, I
D
= –65 A
20 V,
10 V
65
V
GS
= 0 V, V
DS
= –25 V f = 1 MHz
V
25 V,
MH
5400
640
300
85
25
15
15
380
75
140
25
580
ns
115
210
130
nC
C
pF
F
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= –65 A, di/dt = 100 A/ms
65 A di/d
A/
I
F
= –65 A, V
GS
= 0 V
–1.2
40
2.0
0.04
–65
A
–240
–1.5
80
4
0.1
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71174
S-00831—Rev. A, 01-May-00
SUP/SUB65P04-15
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 7 V
200
I
D
– Drain Current (A)
I
D
– Drain Current (A)
6V
80
100
Vishay Siliconix
Transfer Characteristics
150
5V
100
60
40
T
C
= 125_C
20
25_C
–55_C
0
50
4V
3, 2 V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
80
T
C
= –55_C
25_C
g
fs
– Transconductance (S)
60
125_C
r
DS(on)
– On-Resistance (
W
)
0.03
0.04
On-Resistance vs. Drain Current
40
0.02
V
GS
= 4.5 V
V
GS
= 10 V
0.01
20
0
0
20
40
60
80
100
0
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
8000
20
Gate Charge
V
GS
– Gate-to-Source Voltage (V)
16
6000
C – Capacitance (pF)
C
iss
V
DS
= 20 V
I
D
= 65 A
12
4000
8
2000
C
oss
C
rss
4
0
0
6
12
18
24
30
0
0
40
80
120
160
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71174
S-00831—Rev. A, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
SUP/SUB65P04-15
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
W
)
(Normalized)
I
S
– Source Current (A)
1.5
100
Source-Drain Diode Forward Voltage
T
J
= 150_C
1.0
10
0.5
T
J
= 25_C
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
60
Drain Source Breakdown vs.
Junction Temperature
I
D
= 250
mA
55
100
I
Dav
(a)
I
AV
(A) @ T
A
= 25_C
V
(BR)DSS
(V)
I
AV
(A) @ T
A
= 150_C
1
50
10
45
40
0.1
0.00001
0.0001
0.001
0.01
0.1
1
35
–50
–25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
– Junction Temperature (_C)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71174
S-00831—Rev. A, 01-May-00
SUP/SUB65P04-15
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
75
1000
Vishay Siliconix
Safe Operating Area
60
100
I
D
– Drain Current (A)
45
I
D
– Drain Current (A)
Limited
by r
DS(on)
10
ms
100
ms
10
1 ms
10 ms
100 ms
dc
30
1
15
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Case Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
–4
10
–3
10
–2
10
–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71174
S-00831—Rev. A, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
2-5
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