TSM70N900
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 4.5A, 0.9Ω
FEATURES
●
●
●
●
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
700
0.9
9.7
UNIT
V
Ω
nC
APPLICATION
●
●
Power Supply
Lighting
ITO-220
TO-251 (IPAK)
TO-252 (DPAK)
Notes:
MSL 3 (Moisture Sensitivity Level) for TO-252 (DPAK) per J-STD-020.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL IPAK/DPAK
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
50
64
1.6
(Note 3)
(Note 3)
ITO-220
700
±30
4.5
2.7
UNIT
V
V
A
A
(Note 2)
13.5
20
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
W
mJ
A
°C
Operating Junction and Storage Temperature Range
- 55 to +150
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL IPAK/DPAK
R
ӨJC
R
ӨJA
2.5
62
ITO-220
6.25
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000140
1
Version: E1706
TSM70N900
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
C
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 4)
CONDITIONS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 700V, V
GS
= 0V
V
GS
= 10V, I
D
= 1.5A
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(on)
Q
g
MIN
700
2.0
--
--
--
TYP
--
3.1
--
--
0.83
MAX
--
4.0
±100
1
0.9
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Dynamic
(Note 5)
V
V
nA
µA
Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Gate Resistance
Switching
(Note 6)
--
--
--
--
--
--
9.7
2.9
3.5
482
34
3.6
--
--
--
--
--
--
pF
Ω
nC
V
DS
= 380V, I
D
= 2.3A,
V
GS
= 10V
V
DS
= 100V, V
GS
= 0V,
f = 1.0MHz
F = 1MHz, open drain
Q
gs
Q
gd
C
iss
C
oss
R
g
t
d(on)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
5.
6.
Current limited by package
Pulse width limited by the maximum junction temperature
L = 50mH, I
AS
= 1.6A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
o
--
--
--
--
20
54
34
48
--
--
--
--
ns
V
DD
= 380V,
R
GEN
= 40Ω,
I
D
= 2.3A, V
GS
= 10V,
(Note 4)
t
r
t
d(off)
t
f
I
S
= 4.5A, V
GS
= 0V
V
R
=200V, I
S
= 2.3A
dI
F
/dt = 100A/μs
V
SD
t
rr
Q
rr
--
--
--
--
176
1.1
1.4
--
--
V
ns
μC
Document Number: DS_P0000140
2
Version: E1706
TSM70N900
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM70N900CI C0G
TSM70N900CH C5G
TSM70N900CP ROG
PACKAGE
ITO-220
TO-251 (IPAK)
TO-252 (DPAK)
PACKING
50pcs / Tube
75pcs / Tube
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000140
3
Version: E1706
TSM70N900
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
Document Number: DS_P0000140
4
Version: E1706
TSM70N900
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Maximum Safe Operating Area (ITO-220)
Document Number: DS_P0000140
5
Version: E1706
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