PD - 91572A
IRG4RC10U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-252AA package
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.15V
@V
GE
= 15V, I
C
= 5.0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
8.5
5.0
34
34
±20
110
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
0.3 (0.01)
Max.
3.3
50
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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1
8/30/99
IRG4RC10U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
14
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.54 —
V/°C V
GE
= 0V, I
C
= 1.0mA
— 2.15 2.6
I
C
= 5.0A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
— 2.61 —
I
C
= 8.5A
See Fig.2, 5
V
— 2.30 —
I
C
= 5.0A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-8.7
— mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
2.8
4.2
—
S
V
CE
=
100V, I
C
= 5.0A
—
—
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
—
—
2.0
µA
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
15
22
I
C
= 5.0A
2.6 4.0
nC
V
CC
= 400V
See Fig. 8
5.8 8.7
V
GE
= 15V
19
—
11
—
T
J
= 25°C
ns
116 240
I
C
= 5.0A, V
CC
= 480V
81 180
V
GE
= 15V, R
G
= 100Ω
0.08 —
Energy losses include "tail"
0.16 —
mJ See Fig. 9, 10, 14
0.24 0.36
18
—
T
J
= 150°C,
14
—
I
C
= 5.0A, V
CC
= 480V
ns
180 —
V
GE
= 15V, R
G
= 100Ω
150 —
Energy losses include "tail"
0.36 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
270 —
V
GE
= 0V
21
—
pF
V
CC
= 30V
See Fig. 7
3.5
—
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 100Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4RC10U
4.0
F or b ot h:
T ria ng u la r w av e:
I
3.0
D uty c ycle : 5 0%
T
J
= 1 25 °C
T
A
= 5 5°C
Ga te drive as s p e cified
P ow e r D is s ip at i on = 1 .4 W
Typ ic al F R -4 b oa rd m o u n t
Load Current ( A )
C lam p vo lta g e:
80% o f rate d
S q u are w ave:
2.0
6 0% o f rate d
v o lta g e
I
1.0
Ide al d io des
0.0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
10
T
J
= 150
o
C
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
o
C
1
T
J
= 25
o
C
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
12
13
14
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4RC10U
10
5.0
8
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 10 A
Maximum DC Collector Current(A)
4.0
6
3.0
4
I
C
=
5.0 A
5A
I
C
= 2.5 A
2.0
2
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4RC10U
500
400
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 5.0A
16
C, Capacitance (pF)
300
Cies
12
200
8
100
Coes
Cres
4
0
1
10
0
0
4
8
12
16
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.26
I
C
= 5.0A
10
100Ω
R
G
= 100Ohm
V
GE
= 15V
V
CC
= 480V
1
I
C
=
10
A
I
C
=
5.0
A
5
A
I
C
=
2.5
A
0.22
0.18
0.1
0.14
0.10
50
R Gate Resistance
(
Ω )
R
G
G
,
,
Gate Resistance (Ohm)
60
70
80
90
100
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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