PD-97634
l
l
l
l
l
l
l
l
l
l
RoHS Compliant and Halogen Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Control FET Application
Compatible with existing Surface Mount Techniques
100% Rg tested
Footprint compatible to DirectFET
Typical values (unless otherwise specified)
DirectFET
®
plus
Power MOSFET
V
GS
R
DS(on)
Q
gs2
1.4nC
IRF6811SPbF
IRF6811STRPbF
R
DS(on)
Q
oss
11nC
V
DSS
Q
g
tot
25V max ±16V max 2.8mΩ @ 10V 4.1mΩ @ 4.5V
Q
gd
4.2nC
Q
rr
23nC
V
gs(th)
1.6V
11nC
D
G
S
D
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6811STRPbF combines the latest HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
®
package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
12
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±16
19
15
74
150
32
15
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
25
ID= 15A
VDS= 20V
A
mJ
A
10
8
6
4
2
0
T J = 25°C
ID = 19A
TJ = 125°C
VDS= 13V
VDS= 5.0V
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
30
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.28mH, R
G
= 50Ω, I
AS
= 15A.
www.irf.com
1
01/28/11
IRF6811SPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
22
2.8
4.1
1.6
-6.2
–––
–––
–––
–––
–––
11
2.2
1.4
4.2
3.2
5.6
11
0.4
8.7
19
11
5.5
1590
460
110
–––
–––
3.7
5.4
2.1
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 19A
mΩ
V
GS
= 4.5V, I
D
= 15A
V
V
DS
= V
GS
, I
D
= 35µA
mV/°C V
DS
= V
GS
, I
D
= 25µA
µA V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 16V
V
S
V
GS
= -16V
V
DS
= 13V, I
D
= 15A
V
DS
= 13V
nC
V
GS
= 4.5V
I
D
= 15A
See Fig. 2 & 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
ns
I
D
= 15A
R
G
= 1.5Ω
See Fig. 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
i
i
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
18
23
40
A
150
1.0
27
35
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
T
J
= 25°C, I
F
= 15A
di/dt = 300A/µs
Ãg
i
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
www.irf.com
IRF6811SPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.1
1.3
32
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
Thermal Response ( Z thJA )
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
60
–––
–––
3.9
–––
Units
°C/W
eÃ
W/°C
10
1
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
4
τ
A
Ri (°C/W)
21.298
24.844
3.3632
10.411
2.002815
0.296144
0.000886
0.027621
τi
(sec)
0.1
τ
1
τ
2
τ
3
τ
4
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
www.irf.com
3
IRF6811SPbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
10
2.5V
2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
2.0
ID = 19A
V GS = 10V
V GS = 4.5V
1.5
ID, Drain-to-Source Current (A)
10
1.0
1
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
45
40
35
T J = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Typical RDS(on) ( mΩ)
10000
C, Capacitance(pF)
C oss = C ds + C gd
30
25
20
15
10
5
Ciss
1000
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
20
40
60
80
100 120 140 160
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
www.irf.com
IRF6811SPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10msec
1
DC
T A = 25°C
T J = 150°C
100
T J = 150°C
T J = 25°C
T J = -40°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1
VGS = 0V
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, Source-to-Drain Voltage (V)
0.1
Single Pulse
0.01
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig11.
Maximum Safe Operating Area
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 25µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
ID, Drain Current (A)
Fig 12.
Maximum Drain Current vs. Case Temperature
140
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
1.4A
2.2A
BOTTOM 15A
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
