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RN2130MFVL3F

产品描述Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
产品类别半导体    分立半导体   
文件大小164KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN2130MFVL3F概述

Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor

RN2130MFVL3F规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - Pre-Biased
制造商
Manufacturer
Toshiba(东芝)
RoHSDetails
ConfigurationSingle
Transistor PolarityPNP
Typical Input Resistor100 kOhms
Typical Resistor Ratio1
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-723-3
DC Collector/Base Gain hfe Min100
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
Pd-功率耗散
Pd - Power Dissipation
150 mW
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
Emitter- Base Voltage VEBO- 10 V
Number of Channels1 Channel
工厂包装数量
Factory Pack Quantity
8000

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RN2130MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2130MFV
0.22±0.05
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
1.2±0.05
0.8±0.05
Unit: mm
1.2±0.05
0.8±0.05
0.32±0.05
Complementary to RN1130MFV
0.4
0.4
1
2
3
Equivalent Circuit
0.5±0.05
VESM
JEDEC
1.BASE
2.EMITTER
3.COLLECTOR
2-1L1A
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
−50
−50
−10
−100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEITA
TOSHIBA
Weight : 1.5 mg (typ.)
Note1: Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Example
0.5
0.45
Unit: mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-04
1
2014-03-01
0.13±0.05

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