StrongIRFET
IRFS7437PbF
IRFSL7437PbF
Applications
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC Inverters
HEXFET
®
Power MOSFET
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
40V
1.4mΩ
1.8mΩ
250A
195A
c
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
l
Halogen-Free
G
S
G
G
D
S
D
2
Pak
IRFS7437PbF
TO-262
IRFSL7437PbF
D
S
Gate
Drain
Source
Base Part Number
IRFSL7437PbF
IRFS7437PbF
IRFS7437PbF
Package Type
TO-262
D2Pak
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
50
50
800
Orderable Part Number
IRFSL7437PbF
IRFS7437PbF
IRFS7437TRLPbF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
6
250
ID = 100A
LIMITED BY PACKAGE
200
ID , Drain Current (A)
5
4
150
3
TJ = 125°C
100
2
1
TJ = 25°C
50
0
4.0
6.0
8.0
10.0 12.0 14.0 16.0 18.0 20.0
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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©
2015 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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January 6, 2015
IRFS7437PbF/IRFSL7437PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
250
180
195
1000
230
1.5
± 20
3.0
-55 to + 175
°C
10lbf in (1.1N m)
300
W
W/°C
V
V/ns
Units
A
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
f
x
x
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
Thermal Resistance
Symbol
R
θJC
R
θJA
e
Single Pulse Avalanche Energy
k
Avalanche Current
Ãd
Repetitive Avalanche Energy
d
Single Pulse Avalanche Energy
Parameter
Junction-to-Case
350
802
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
j
Typ.
Max.
0.65
40
Units
°C/W
Junction-to-Ambient (PCB Mount) , D
2
Pak
j
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.029
1.4
2.0
3.0
–––
–––
–––
–––
2.2
Max.
–––
–––
1.8
–––
3.9
1.0
150
100
-100
–––
Ω
nA
Units
V
V/°C
mΩ
V
μA
–––
–––
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Reference to 25°C, I
D
= 1mA
d
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.069mH
R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1166A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50Ω, I
AS
= 40A, V
GS
=10V.
2
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©
2015 International Rectifier
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January 6, 2015
IRFS7437PbF/IRFSL7437PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
41
51
99
19
70
78
53
7330
1095
745
1310
1735
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=20V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 32V
g
ns
pF
g
h
iÃ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
250
Ãd
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
MOSFET symbol
showing the
G
––– ––– 1000
A integral reverse
p-n junction diode.
–––
1.0
1.3
V T
J
= 25°C, I
S
= 100A, V
GS
= 0V
–––
30
–––
ns T
J
= 25°C
V
R
= 34V,
–––
30
–––
T
J
= 125°C
I
F
= 100A
di/dt = 100A/μs
–––
24
–––
nC T
J
= 25°C
–––
25
–––
T
J
= 125°C
–––
1.3
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Conditions
D
g
S
g
3
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2015 International Rectifier
Submit Datasheet Feedback
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
4.5V
10
4.5V
≤60μs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
≤60μs
PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current(A)
ID = 100A
VGS = 10V
TJ = 175°C
100
TJ = 25°C
10
VDS = 10V
1.0
3
4
5
≤60μs
PULSE WIDTH
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 100A
VDS = 32V
VDS = 20V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
40
80
120
160
200
QG Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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©
2015 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
1000
1000
ISD, Reverse Drain Current (A)
100
TJ = 175°C
ID, Drain-to-Source Current (A)
100μsec
100
Limited by Package
1msec
10
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10msec
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
0.1
VDS, Drain-toSource Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
50
Id = 1.0mA
48
Fig 10.
Maximum Safe Operating Area
1.2
1.0
0.8
46
Energy (μJ)
0.6
44
0.4
42
0.2
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on) , Drain-to-Source On Resistance (
Ω)
Fig 12.
Typical C
OSS
Stored Energy
VGS = 5.5V
VGS = 6.0V
8
7
6
5
VGS = 7.0V
4
3
2
1
0
100
200
300
400
500
ID , Drain Current (A)
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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©
2015 International Rectifier
Submit Datasheet Feedback
January 6, 2015
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