DP
AK
BTA208S-600B
3Q Hi-Com Triac
Rev. 3 — 13 April 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT428 surface-mountable
plastic package. This "series B" triac is intended for use in circuits where high static and
dynamic dV/dt and high dI/dt can occur. The "series B" will commutate the full rated RMS
current at the maximum rated junction temperature, without the aid of a snubber.
1.2 Features and benefits
3Q technology for improved noise
immunity
High commutation capability with
maximum false trigger immunity
High immunity to false turn-on by dV/dt
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Surface-mountable package
Triggering in three quadrants only
1.3 Applications
Electronic thermostats
General purpose motor controls
Rectifier-fed DC inductive loads e.g.
DC motors and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive
peak on-state
current
RMS on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
mb
≤
102 °C;
see
Figure 1;
see
Figure 2;
see
Figure 3
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Conditions
Min
-
-
Typ
-
-
Max Unit
600
65
V
A
I
T(RMS)
-
-
8
A
Static characteristics
I
GT
gate trigger
current
2
2
2
18
21
34
50
50
50
mA
mA
mA
NXP Semiconductors
BTA208S-600B
3Q Hi-Com Triac
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base;
main terminal 2
2
1
3
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA208S-600B
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤
102 °C;
see
Figure 1;
see
Figure 2;
see
Figure 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
t
p
= 10 ms; sine-wave pulse
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-40
-
Max
600
8
65
72
21
100
2
5
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA208S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 13 April 2011
2 of 13
NXP Semiconductors
BTA208S-600B
3Q Hi-Com Triac
10
I
T(RMS)
(A)
8
102
°C
003aaf581
25
I
T(RMS)
(A)
20
003aaf617
6
15
4
10
2
5
0
−50
0
0
50
100
150
T
mb
(°C)
10
−2
10
−1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of heatsink
temperature; maximum values
12
Fig 2.
RMS on-state current as a function of surge
duration; maximum value
003aaf618
P
tot
(W)
10
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
101
T
mb(max)
(°C)
105
8
109
6
113
4
117
2
121
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA208S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 13 April 2011
3 of 13
NXP Semiconductors
BTA208S-600B
3Q Hi-Com Triac
80
I
TSM
(A)
60
003aaa968
40
I
T
20
I
TSM
t
T
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab121
10
3
I
T
I
TSM
(A)
(1)
10
2
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
−2
10
−1
1
10
t
p
(ms)
10
2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA208S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 13 April 2011
4 of 13
NXP Semiconductors
BTA208S-600B
3Q Hi-Com Triac
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
full cycle; see
Figure 6
half cycle; see
Figure 6
in free air; printed circuit board (FR4)
mounted
Min
-
-
-
Typ
-
-
75
Max
2
2.4
-
Unit
K/W
K/W
K/W
R
th(j-a)
10
Z
th(j-mb)
(K/W)
1
unidirectional
003aaf584
bidirectional
10
−1
P
tp
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
BTA208S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 13 April 2011
5 of 13
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