1N8031-GA
V
RRM
I
F (Tc=25°C)
Q
C
Package
RoHS Compliant
High Temperature Silicon Carbide
Power Schottky Diode
Features
650 V Schottky rectifier
210 °C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of V
F
Temperature independent switching behavior
Lowest figure of merit Q
C
/I
F
Available screened to Mil-PRF-19500
=
=
=
650 V
4A
7 nC
3
1
PIN 1
PIN 3
SMD0.5 / TO – 276 (Hermetic Package)
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at T
j
= 210 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
I t value
Power dissipation
Operating and storage temperature
Symbol
V
RRM
I
F
I
F
I
F(RMS)
I
F,SM
I
F,max
2
∫i dt
P
tot
T
j
, T
stg
Conditions
T
C
= 25 °C
T
C
≤ 190 °C
T
C
≤ 190 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C
Values
650
4
1
2
10
65
0.5
64
-55 to 210
Unit
V
A
A
A
A
A
2
AS
W
°C
Electrical Characteristics at T
j
= 210 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 1 A, T
j
= 25 °C
I
F
= 1 A, T
j
= 210 °C
V
R
= 650 V, T
j
= 25 °C
V
R
= 650 V, T
j
= 210 °C
I
F
≤ I
F,MAX
V
R
= 400 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 210 °C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 650 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.6
2.6
1
5
7
< 17
76
12
12
max.
Unit
V
5
50
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
3.55
°C/W
Mechanical Properties
Mounting torque
M
0.6
Nm
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1N8031-GA
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = t
P
/T, t
P
= 400 µs)
(Considering worst case Z
th
conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Dec 2014
Figure 6: Typical Capacitive Energy vs Reverse Voltage
Characteristics
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1N8031-GA
Figure 7: Current vs Pulse Duration Curves at T
C
= 190 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
SMD-0.5/TO-276
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
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Revision History
Date
2014/08/26
2012/04/24
Revision
1
0
Comments
Updated Electrical Characteristics
Initial release
1N8031-GA
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
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1N8031-GA
SPICE Model Parameters
This is a secure document. Copy this code from the SPICE model PDF file on our website into a SPICE
software program for simulation of the 1N8031-GA.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
05-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of 1N8031-GA SPICE Model
*
.SUBCKT 1N8031 ANODE KATHODE
D1 ANODE KATHODE 1N8031_25C; Call the Schottky Diode Model
D2 ANODE KATHODE 1N8031_PIN; Call the PiN Diode Model
.MODEL 1N8031_25C D
+ IS
3.57E-18
RS
0.49751
+ TRS1
0.0057
TRS2
2.40E-05
+ N
1
IKF
322
+ EG
1.2
XTI
3
+ CJO
9.12E-11
VJ
0.371817384
+ M
1.527759838
FC
0.5
+ TT
1.00E-10
BV
650
+ IBV
1.00E-03
VPK
650
+ IAVE
1
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL 1N8031_PIN D
+ IS
5.73E-11
RS
0.72994
+ N
5
IKF
800
+ EG
3.23
XTI
-14
+ FC
0.5
TT
0
+ BV
650
IBV
1.00E-03
+ VPK
650
IAVE
1
+ TYPE
SiC_PiN
.ENDS
*
* End of 1N8031-GA SPICE Model
Dec 2014
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