PD - 97215
DirectFET™ Power MOSFET
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
IRF6612PbF
IRF661TRPbF
R
DS(on)
R
DS(on)
V
DSS
V
GS
30V max ±20V max 2.5mΩ@ 10V 3.4mΩ@ 4.5V
Q
g
tot
Q
gd
10nC
Q
gs2
2.9nC
Q
rr
8.1nC
Q
oss
18nC
V
gs(th)
1.8V
30nC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MX
MT
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
E
AS
I
AR
10
9
8
7
6
5
4
3
2
1
0
2
Typical RDS(on) (mΩ)
Max.
30
±20
136
24
19
190
37
19
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ID = 24A
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
ID = 19A
A
mJ
A
T J = 125°C
VDS = 24V
VDS = 15V
T J = 25°C
3
4
5
6
7
8
9
10
10
20
30
40
www.irf.com
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.20mH, R
G
= 25Ω, I
AS
= 19A.
1
05/29/06
IRF6612PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
96
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
24
2.5
3.4
1.8
-5.6
–––
–––
–––
–––
–––
30
8.5
2.9
10
8.6
13
18
15
52
21
4.8
3970
780
360
Max.
–––
–––
3.3
4.4
2.25
–––
1.0
100
100
-100
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 24A
mΩ
V
GS
= 4.5V, I
D
= 19A
V
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 19A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 19A
See Fig. 14
nC
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 19A
ns
Clamped Inductive Load
See Fig. 15 & 16
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
V
DS
= V
GS
, I
D
= 250µA
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
8.1
1.0
29
12
V
ns
nC
–––
–––
190
Min.
–––
Typ.
–––
Max.
110
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 19A, V
GS
= 0V
T
J
= 25°C, I
F
= 19A
di/dt = 100A/µs
See Fig. 17
G
S
D
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
www.irf.com
IRF6612PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
2.8
1.8
89
270
-40 to + 150
W
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
1
Ri (°C/W)
τ
A
τi
(sec)
0.000322
0.164798
2.25760
69
τ
J
1.2801
8.7256
21.750
13.251
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
www.irf.com
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
IRF6612PbF
10000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
100
2.7V
10
10
2.7V
≤
60µs PULSE WIDTH
1
0.1
Tj = 25°C
1
V DS, Drain-to-Source Voltage (V)
1
10
0.1
≤
60µs PULSE WIDTH
Tj = 150°C
1
V DS, Drain-to-Source Voltage (V)
10
Fig 4.
Typical Output Characteristics
1000
Fig 5.
Typical Output Characteristics
1.5
100
10
T J = 150°C
1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
VDS = 10V
≤60µs
PULSE WIDTH
ID = 25A
VGS = 10V
T J = 25°C
1.0
0.1
0
1
2
3
4
5
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
Fig 7.
Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
Coss
Crss
1000
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
www.irf.com
IRF6612PbF
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100.00
T J = 150°C
10
100µsec
1msec
10.00
T J = 25°C
1
1.00
0.4
0.5
0.6
0.7
0.8
0.9
VGS = 0V
1.0
1.1
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
0.1
100
1000
VDS, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
140
120
ID, Drain Current (A)
VGS(th) Gate threshold Voltage (V)
Fig10.
Maximum Safe Operating Area
2.5
2.0
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
1.5
ID = 250µA
1.0
0.5
0.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 11.
Maximum Drain Current vs. Case Temperature
150
Fig 12.
Threshold Voltage vs. Temperature
ID
TOP
5.3A
6.2A
BOTTOM 19A
EAS , Single Pulse Avalanche Energy (mJ)
125
100
75
50
25
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13.
Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
