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WBC-R0202AS-03-2803-C

产品描述Resistor Networks u0026 Arrays
产品类别无源元件    电阻器   
文件大小351KB,共3页
制造商TT Electronics plc
官网地址http://www.ttelectronics.com/
标准
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WBC-R0202AS-03-2803-C概述

Resistor Networks u0026 Arrays

WBC-R0202AS-03-2803-C规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称TT Electronics plc
包装说明SMT, 0202
Reach Compliance Codecompliant
ECCN代码EAR99
构造Chip
制造商序列号WBC(DISCRETE)
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装长度0.508 mm
封装形式SMT
封装宽度0.508 mm
包装方法Tray
额定功率耗散 (P)0.25 W
电阻280000 Ω
电阻器类型FIXED RESISTOR
系列WBC(DISCRETE)
尺寸代码0202
技术THIN FILM
温度系数-25,25 ppm/°C
容差0.25%
工作电压100 V

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Resistors
Wire Bondable
WBC Series
Chip Resistors
Wire Bondable
Chip Resistors
Discrete or tapped schematics
MIL inspection available
WBC Series
High resistor density
Discrete or tapped schematics
MIL inspection available
High resistor density
All parts are Pb-free and comply with EU Directive 2011/65/EU (RoHS2)
IRC’s WBC series wire bondable chip resistors are ideally suited for the most demanding hybrid application.
The WBC combines IRC’s TaNSil
®
tantalum nitride thin film technology with silicon substrate processing to
produce an extremely small tantalum nitride thin film technology with silicon substrate processing to produce
an extremely small footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil
®
resistor film.
Available in a wide range of tolerances and temperature coefficients to fit a variety of hybrid circuit applica-
tions. Custom resistance values, sizes and schematics are available on request from the factory.
Physical Data
R0202 - Discrete
( 0 . 5 0 8 mm ± 0 . 0 2 5 )
0. 020˝ ± 0. 001
Electrical Data
Absolute Tolerance
Absolute TCR
Package Power Rating
(@ 70°C)
Rated Operating Voltage
(not to exceed
P x R )
Operating Temperature
Back contact
Noise
R
Top contact
pad chamfered
0.004˝ min bond pad size
to ±0.1%
to ±25ppm/°C
250mW
100V
-55°C to +150°C
<-30dB
Oxidized Silicon
(10KÅ SiO
2
min)
0.010˝ ±0.001
(0.254mm ±0.025)
10KÅ minimum
15KÅ minimum
Silicon
(Al / Au optional)
3KÅ Au minimum
10KÅ Al minimum
Silicon Dioxide or
Silicon Nitride
R
0.004˝ min bond pad size
0.020˝ ±0.001
(0.508mm ±0.025)
B0202 - Discrete back contact
1
( 0 . 5 0 8 mm ± 0 . 0 2 5 )
0. 020˝ ± 0. 001
Substrate Material
Top contact
Substrate Thickness
Aluminum
Gold
1
R0202 and
T0303
B0202
1
0.020˝ ±0.001
(0.508mm ±0.025)
T0303 - Tapped network ½R + ½R
Bond Pad
Metallization
( 0 . 7 6 2 mm ± 0 . 0 2 5 )
0. 030˝ ± 0. 001
½R
½R
Backside
0.030˝ ±0.001
(0.762mm ±0.025)
0.004˝ min bond pad size
Passivation
Note 1: Not recommended for new designs
General Note
IRC reserves the right to make changes in product specification without notice or liability.
All information is subject to IRC’s own data and is considered accurate at time of going to print.
© IRC Advanced Film Division
• Corpus Christi Texas 78411 USA
Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Website: www.irctt.com
A subsidiary of
TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
BI Technologies IRC Welwyn
http://www.ttelectronics.com/resistors
WBC Series Issue January 2009 Sheet 1 of 3
© TT Electronics plc
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