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FXT749STOA: 产品描述Bipolar Transistors - BJT; 产品类别半导体分立半导体; 文件大小28KB，共1页; 制造商Diodes; 官网地址http://www.diodes.com/

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FXT749STOA概述

Bipolar Transistors - BJT

FXT749STOA规格参数

参数名称	属性值
产品种类 Product Category	Bipolar Transistors - BJT
制造商 Manufacturer	Diodes
RoHS	No
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	25 V
Collector- Base Voltage VCBO	35 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	2 A
Gain Bandwidth Product fT	160 MHz
最大工作温度 Maximum Operating Temperature	+ 150 C
高度 Height	4.01 mm
长度 Length	4.77 mm
最小工作温度 Minimum Operating Temperature	- 55 C
Pd-功率耗散 Pd - Power Dissipation	1000 mW
宽度 Width	2.41 mm
单位重量 Unit Weight	0.016000 oz

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 FEB 94

FEATURES

* 25 Volt V

CEO

* 2 Amp continuous current

* Low saturation voltage

* P

tot

= 1 Watt

FXT749

REFER TO ZTX749 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

tot

stg

E-Line

TO92 Compatible

VALUE

-35

-25

-5

-6

-2

-55 to +200

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

MIN.

-35

-25

-5

-0.1

-10

-0.1

-0.12

-0.23

-0.9

-0.8

100

200

150

160

100

-0.3

-0.5

-1.25

-1

300

MHz

TYP.

MAX.

UNIT

CONDITIONS.

=-100

A, I

=-10mA, I

=0*

=-100

A, I

=-30V

=-30V,

amb

=100°C

=-4V, I

=-1A, I

=-100mA*

=-2A, I

=-200mA*

=-1A, I

=-100mA*

IC=-1A, V

=-2V*

=-50mA, V

=-2V*

=-1A, V

=-2V*

=-2A, V

=-2V*

=-6A, V

=-2V*

=-100mA, V

=-5V

f=100MHz

=-10V, f=1MHz

Emitter Cut-Off Current I

EBO

CE(sat)

BE(sat)

BE(on)

Static Forward Current h

Transfer Ratio

Transition

Frequency

Output Capacitance

obo

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

3-56

FXT749STOA相似产品对比

	FXT749STOA	FXT749
描述	Bipolar Transistors - BJT	Bipolar Transistors - BJT
产品种类 Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
制造商 Manufacturer	Diodes	Diodes
RoHS	No	No
安装风格 Mounting Style	Through Hole	Through Hole
封装 / 箱体 Package / Case	TO-92-3	TO-92-3
Transistor Polarity	PNP	PNP
Configuration	Single	Single
Collector- Emitter Voltage VCEO Max	25 V	25 V
Collector- Base Voltage VCBO	35 V	35 V
Emitter- Base Voltage VEBO	5 V	5 V
Maximum DC Collector Current	2 A	2 A
Gain Bandwidth Product fT	160 MHz	160 MHz
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
高度 Height	4.01 mm	4.01 mm
长度 Length	4.77 mm	4.77 mm
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C
Pd-功率耗散 Pd - Power Dissipation	1000 mW	1000 mW
宽度 Width	2.41 mm	2.41 mm
单位重量 Unit Weight	0.016000 oz	0.016000 oz

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