MGA-43328
(2.5–2.7) GHz 29dBm High Linearity Wireless Data Power Amplifier
Data Sheet
Description
Avago Technologies’ MGA-43328 is a power amplifier for
use in the (2.5-2.7)GHz band. High linear output power
at 5V is achieved through the use of Avago Technologies’
proprietary 0.25um GaAs Enhancement-mode pHEMT
process. It is housed in a miniature 5.0mm x 5.0mm x
0.85mm 28-lead QFN package. It also includes shutdown
and switchable gain functions. A detector is also included
on-chip. The compact footprint coupled with high gain
and high efficiency make the MGA-43328 an ideal choice
as a power amplifier for IEEE 802.16 (WiMAX) and WLL ap-
plications.
Features
High gain: 37.3dB
High linearity performance: 29.3dBm at 5V supply (2.5%
EVM, 64-QAM ¾ FEC rate OFDMA, 10MHz bandwidth)
High efficiency: 16.6%
Built-in detector and shutdown switches
Switchable gain: 24.5dB attenuation using one single
CMOS compatible switch pin
ETSI spectral mask compliant at 29dBm output power
GaAs E-pHEMT Technology
[1]
Low cost small package size: 5.0 x 5.0 x 0.85 mm
3
MSL-2a and lead-free
Usable at 3.3V supply for lower supply voltage
applications
Component Image
5.0 x 5.0 x 0.85 mm
3
28-lead QFN Package (Top View)
Vdd1
Gnd
Vdd2
Vdd3
Vdd3
Vdd3
Specifications
43328
YYWW
XXXX
RFin
Gnd
RFout
RFout
RFout
2.6GHz; Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.0k, R3 =
390, R4 = 1.1k as shown in Figure 36), Iqtotal = 470mA
(typ), IEEE 802.16e 64-QAM OFDMA, ¾ FEC rate
37.3 dB Gain
29.3 dBm Linear Pout (2.5% EVM)
16.6% PAE @ Linear Pout
2.6V Vdet @ Linear Pout
24.5 dB Switchable Gain Attenuation
25A Shutdown Current
Vbyp
Vbias
Vdet
Vc1
Vc2
Vc3
Notes:
Package marking provides orientation and identification
”43328” = Device part number
”YYWW” = Year and work week
”XXXX” = Assembly lot number
Functional Block Diagram
Vdd1
Vdd2
Vdd3
Applications
High linearity amplifier for IEEE 802.16 fixed terminal
amplifier
WLL amplifier
RFout
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
RFin
Gain switch and
bias circuitry
Vbyp Vc1 Vc2 Vc3 Vbias
Vdet
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol
Vdd, Vbias
Vc
P
in,max
P
diss
T
j,MAX
T
STG
Thermal Resistance
Units
V
V
dBm
W
°C
°C
Parameter
Supply voltages, bias supply voltage
Control Voltage
CW RF Input Power
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Absolute Max.
6.0
(Vdd)
20
8.0
150
-65 to 150
Thermal Resistance
[2]
jc
= 11.7°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique.
3. Board temperature (T
c
) is 25°C, for T
c
>56.4°C
derate the device power at 85.5mW per °C
rise in board temperature adjacent to
package bottom.
Electrical Specifications
T
A
= 25°C, Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.0k, R3 = 390, R4 = 1.1k as shown in Figure 36), Vbyp = 0V, Iqtotal
= 470mA, RF performance at 2.6 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, 10MHz bandwidth OFDMA operation unless
otherwise stated.
Symbol
Vdd
Iqtotal
Gain
OP1dB
Pout_5V
Itotal_5V
S11
S22
S12
Atten
Vdet
DetR
NF
S
Parameter and Test Condition
Supply Voltage
Quiescent Supply Current (normal high gain mode)
Quiescent Supply Current (low gain mode, Vbyp = 5.0V)
Gain
Output Power at 1dB Gain Compression
Linear Output Power @ 2.5% EVM with 64-QAM OFDMA
modulation per IEEE 802.16e specs, 50% duty cycle, ¾ rate FEC
Total current draw at Pout_5V level
Input Return Loss, 50 source
Output Return Loss, 50 source
Reverse Isolation
Gain attenuation in low gain mode
Detector output DC voltage @ 29dBm linear Pout
Detector RF dynamic range
Noise figure
Stability under load VSWR of 6:1 (all phase angle), spurious output
Units
V
mA
mA
dB
dBm
dBm
mA
dB
dB
dB
dB
V
dB
dB
dBc
Min.
Typ.
5.0
470
470
Max.
35.0
27.7
37.3
35.5
29.3
1017
-12
-11
60
1250
21.5
24.5
2.6
10
2.1
27.5
-60
2
Product Consistency Distribution Charts
[1]
LSL
CPK = 2.034,
Std Dev = 0.257
CPK = 1.506,
Std Dev = 0.051
USL
28
29
30
0.8
0.9
1
1.1
1.2
Figure 1. Pout_5V; LSL = 27.7dBm, Nominal = 29.3dBm
Figure 2. Itotal_5V; Nominal = 1.017A, USL = 1.250A
LSL
CPK = 1.780,
Std Dev = 0.440
LSL
CPK = 2.471,
Std Dev = 0.400
USL
35
36
37
38
39
21
22
23
24
25
26
27
28
Figure 3. Gain; LSL = 35dB, Nominal = 37.4dB
Figure 4. Atten; LSL = 21.5dB, Nominal = 24.6dB, USL = 27.5dB; Vbyp = 5V
Note:
1. Distribution data sample size is 2000 samples taken from 3 different wafer lots. T
A
= 25°C, Vdd = Vbias = 5V, Vc = 2.1V (R2 = 1.0k, R3 = 390,
R4 = 1.1k as shown in Figure 36), Vbyp = 0V, RF performance at 2.6GHz unless otherwise stated. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
3
Unless otherwise stated, all modulated signal measurements are made with IEEE 802.16e format as stated in the notes
to Figure 36.
MGA-43328 typical over-temperature performance at Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.0k, R3 = 390,
R4 = 1.1k as shown in Figure 36), Vbyp = 0V unless otherwise stated.
45
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
S21
85°C
25°C
-40°C
S21
S21,S11,S22/dB
S21,S11,S22/dB
85°C
25°C
-40°C
S22
S11
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2
Frequency/GHz
S11
S22
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2
Frequency/GHz
Figure 5. Small-signal performance in high gain mode, Vbyp = 0V
Figure 6. Small-signal performance in low gain mode, Vbyp = 5V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
85°C
25°C
-40°C
Idd total/mA
10
12
14
16
18
20 22
Pout/dBm
24
26
28
30
1300
1200
1100
1000
900
800
700
600
500
400
300
85°C
25°C
-40°C
EVM/%
10
12
14
16
18 20 22
Pout/dBm
24
26
28
30
Figure 7. Over-temperature EVM vs Pout @ 2.5GHz
Figure 8. Over-temperature Idd_total vs Pout @ 2.5GHz
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
85°C
25°C
-40°C
Idd total/mA
10
12
14
16
18
20 22
Pout/dBm
24
26
28
30
1300
1200
1100
1000
900
800
700
600
500
400
300
85°C
25°C
-40°C
EVM/%
10
12
14
16
18 20 22
Pout/dBm
24
26
28
30
Figure 9. Over-temperature EVM vs Pout @ 2.6GHz
4
Figure 10. Over-temperature Idd_total vs Pout @ 2.6GHz
MGA-43328 typical over-temperature performance at Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.0k, R3 = 390,
R4 = 1.1k as shown in Figure 36), Vbyp = 0V unless otherwise stated.
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
85°C
25°C
-40°C
Idd total/mA
1300
1200
1100
1000
900
800
700
600
500
400
300
10
12
85°C
25°C
-40°C
EVM/%
10
12
14
16
18
20 22
Pout/dBm
24
26
28
30
14
16
18 20 22
Pout/dBm
24
26
28
30
Figure 11. Over-temperature EVM vs Pout @ 2.7GHz
Figure 12. Over-temperature Idd_total vs Pout @ 2.7GHz
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
85°C
25°C
-40°C
Vdet/V
10
12
14
16
18
20 22
Pout/dBm
24
26
28
30
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
85°C
25°C
-40°C
Vdet/V
10
12
14
16
18
20 22
Pout/dBm
24
26
28
30
Figure 13. Over-temperature Vdet vs Pout @ 2.5GHz
Figure 14. Over-temperature Vdet vs Pout @ 2.6GHz
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
85°C
25°C
-40°C
Noise Figure/dB
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
12
14
16
18
20 22
Pout/dBm
24
26
28
30
0.0
2.5
2.6
Frequency/GHz
2.7
85°C
25°C
-40°C
Figure 15. Over-temperature Vdet vs Pout @ 2.7GHz
Vdet/V
Figure 16. Over-temperature Noise Figure vs Operating Frequency
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
