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FM24CL64B-GA

产品描述Real Time Clock Integrated RTC/TCXO/Crystal
产品类别存储    存储   
文件大小461KB,共18页
制造商Cypress(赛普拉斯)
标准
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FM24CL64B-GA概述

Real Time Clock Integrated RTC/TCXO/Crystal

FM24CL64B-GA规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Cypress(赛普拉斯)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
Samacsys Description64Kbit 8Kx8 I2C Automotive F-RAM SOIC8 FM24CL64B-GA Serial-I2C FRAM Memory, 64kbit, 3 → 3.6 V 8-Pin SOIC
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度65536 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
混合内存类型N/A
湿度敏感等级3
功能数量1
端子数量8
字数8192 words
字数代码8000
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源3.3 V
认证状态Not Qualified
筛选级别AEC-Q100
座面最大高度1.727 mm
最大待机电流0.00002 A
最大压摆率0.00034 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Tin (Sn)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度3.9 mm
Base Number Matches1

文档预览

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FM24CL64B
64-Kbit (8 K × 8) Serial (I
2
C) Automotive
F-RAM
64-Kbit (8 K × 8) Serial (I
2
C) Automotive F-RAM
Features
Functional Description
The FM24CL64B is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24CL64B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The
FM24CL64B is capable of supporting 10
13
read/write cycles, or
10 million times more write cycles than EEPROM.
These capabilities make the FM24CL64B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24CL64B provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an automotive-e temperature
range of –40
C
to +125
C.
For a complete list of related resources,
click here.
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8 K × 8
13
High-endurance 10 trillion (10 ) read/writes
121-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
120
A
(typ) active current at 100 kHz
6
A
(typ) standby current
Voltage operation: V
DD
= 3.0 V to 3.6 V
Automotive-E temperature: –40
C
to +125
C
8-pin small outline integrated circuit (SOIC) package
AEC Q100 Grade 1 compliant
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
13
8Kx8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
A2-A0
Control Logic
Cypress Semiconductor Corporation
Document Number: 001-84457 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 14, 2015
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