VS-SD300C..C Series
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Vishay Semiconductors
Standard Recovery Diodes
(Hockey PUK Version), 650 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style DO-200AA
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-200AA
TYPICAL APPLICATIONS
• Converters
• Power supplies
650 A
DO-200AA
Single diode
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
TEST CONDITIONS
SD300C..C
04 to 20
650
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
55
1150
25
6050
6335
183
167
400 to 2000
-40 to 180
25 to 32
540
55
995
25
6050
6335
183
167
2500 to 3200
-40 to 150
UNITS
A
°C
A
°C
A
kA
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
12
VS-SD300C..C
16
20
25
28
32
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1200
1600
2000
2500
2800
3200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
500
900
1300
1700
2100
2600
2900
3300
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 15-Apr-14
Document Number: 93544
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-SD300C..C Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level values of forward
slope resistance
High level values of forward
slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
SD300C..C
04 to 20
55 (85)
1150
6050
6335
5090
Sinusoidal half wave,
initial T
J
= T
J
maximum
5330
183
167
129
118
1830
0.95
1.00
0.75
0.72
2.08
25 to 32
55 (85)
995
6050
6335
5090
5330
183
167
129
118
1830
0.95
1.00
0.75
mW
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum;
t
p
= 10 ms sinusoidal wave
0.72
2.08
V
kA
2
√s
V
kA
2
s
A
650 (380) 540 (250)
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
SD300C..C
04 to 20
25 to 32
-40 to 180 -40 to 150
-55 to 200
0.163
0.073
4900 (500)
70
DO-200AA
UNITS
°C
K/W
N (kg)
g
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.017
0.020
0.025
0.036
0.064
DOUBLE SIDE
0.017
0.020
0.025
0.036
0.062
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.020
0.027
0.038
0.065
DOUBLE SIDE
0.012
0.020
0.027
0.038
0.062
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 15-Apr-14
Document Number: 93544
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD300C..C Series
www.vishay.com
Vishay Semiconductors
1 80
M a x im u m A llo w a b le H e a t sin k T em p e ra t u re (° C )
S D 3 0 0 C ..C S e r ie s (4 0 0 V t o 2 0 0 0 V )
(D o u b le S id e C o o le d )
R
thJ-h s
(D C ) = 0 .0 7 3 K /W
180
M a xim u m A llo w a ble H e a ts in k T e m p e r a tu re (°C )
160
140
120
100
80
60
40
0
SD 3 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V )
(S in g le Sid e C o o le d )
R
th J-hs
(D C ) = 0 .1 6 3 K /W
1 60
1 40
1 20
1 00
80
60
40
20
0
C o nduc tio n A ng le
Co n duc tio n Pe rio d
3 0°
30 °
60°
90 °
120 °
180 °
DC
20 0
40 0
6 00
8 00
1 00 0
1 20 0
60°
90°
120 °
1 80°
5 0 1 0 0 1 5 0 20 0 25 0 3 00 35 0 4 0 0 4 50
A v e ra g e F o r w a rd C u rre n t (A )
A v e ra g e F o rw a rd C u rr e n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
18 0
M a xim u m A llo w a b le H e a tsin k T e m p e r a tu re (°C )
16 0
14 0
12 0
10 0
80
60
40
20
0
100
Maxim um Allowable Heatsink Tem perature (°C)
SD 3 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V )
( Sin g le S id e C o o le d )
R
thJ-h s
(D C ) = 0 .1 6 3 K / W
150
140
130
120
110
100
90
80
70
60
50
40
0
50
100 150 200 250 300 350 400
Average Forward Current (A)
30°
60°
90°
120°
180°
Co n duc tio n A ng le
SD 300C..C Series (2500V to 3200V)
(Single Side Cooled )
R
thJ- hs
(DC) = 0.163 K/W
C o ndu ctio n Pe riod
30 ° 60°
90 °
1 2 0°
200
3 00
40 0
1 8 0°
500
DC
60 0
70 0
A v e ra g e F o rw a rd C urr e n t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
180
160
140
120
100
80
60
40
20
0
200
400
600
800
Average Forward Current (A)
30°
Co n duc tio n An g le
Maxim um Allowable Heatsink Tem perature (°C)
Maximum Allowable Heatsink Temperature (°C)
SD 300C..C Series (400V to 2000V )
(Double Side Cooled)
R
thJ-h s
(DC) = 0.073 K/W
60°
90°
120°
180°
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
SD300C..C Series (2500V to 3200V )
( Single Side Cooled)
R
th J-hs
(DC) = 0.163 K/W
C o nd uct io n P erio d
90°
30°
100
60°
200
120°
300
180°
400
DC
500
600
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Revision: 15-Apr-14
Document Number: 93544
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD300C..C Series
www.vishay.com
Vishay Semiconductors
25 0 0
M a x im um A v e ra g e F o rw a rd Po w e r Lo ss (W )
Maximum Allow able Heatsin k Tem perature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
SD300C..C Series (2500V to 3200V)
(Double Side Cooled)
R
th J-h s
(DC) = 0.073 K/W
20 0 0
15 0 0
DC
1 8 0°
1 2 0°
90°
60°
30°
R M S Lim it
C o nduc tio n A ng le
10 0 0
C o nduc tio n Pe rio d
30°
60°
90°
120°
180°
500
S D 3 0 0 C ..C S e r ie s
T
J
= T
J
m a x .
0
200
40 0
600
8 00
1 0 00
1 20 0
0
A v e ra g e F o rw a rd C u rre n t (A )
100
200
300
400
500
600
700
Average Forward Current ( A)
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
150
M a x im um A llo w a b le H e a t sin k T e m p e ra tu re (°C )
P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A )
140
130
120
110
100
90
80
70
60
50
40
30
20
0
SD 3 0 0 C ..C S e rie s (2 5 0 0 V t o 3 2 0 0 V )
(D o u b le Sid e C o o le d )
R
th J-hs
(D C ) = 0 .0 7 3 K / W
60 0 0
55 0 0
50 0 0
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
15 0 0
1
A t A n y R a te d Lo a d C o n d it io n A n d W ith
R a t e d V
RR M
p p lie d Fo llo w in g Su rg e .
A
In it ia l T
J
= T
J
m a x.
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
C o ndu ct io n Pe rio d
30°
60°
9 0°
120 °
1 8 0°
DC
20 0
400
60 0
800
1 0 00
S D 3 0 0 C ..C S e rie s
10
100
A v e ra g e F o rw a rd C u rre n t (A )
N um be r O f E qual A m plitud e Half C y cle Cu rren t Pulse s (N )
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1800
M aximum Average Forward Power L oss (W)
1600
1400
1200
1000
800
600
400
200
0
0
200
400
600
800
Average Forward Curren t (A)
SD300C..C Series
T
J
= T m ax.
J
C o nd uctio n A ng le
7000
180°
120°
90°
60°
30°
P e a k H a lf Sin e W a v e Fo rw a rd C urr e n t (A )
6000
5000
4000
3000
2000
RMS Lim it
M a x im u m N o n R e p e t it iv e Su rg e C u rre n t
V e rsu s P u lse T ra in D ura t io n .
In it ia l T
J
= T
J
m a x .
N o V o lt a g e R e a pp lie d
R a t e d V
RRM
R e a p p lie d
SD 3 0 0 C ..C S e rie s
1000
0.01
0.1
P u lse T ra in D u ra t io n (s)
1
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Revision: 15-Apr-14
Document Number: 93544
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD300C..C Series
www.vishay.com
Vishay Semiconductors
10000
In stant aneous Forward Current (A)
T
J
= 25°C
T
J
= T
J
1000
m ax.
SD300C..C Series
100
0.5
1
1.5
2
2.5
3
3. 5
4
4.5
5
Instantaneous Forwa rd V oltag e (V)
Fig. 13 - Forward Voltage Drop Characteristics
1
Tra n sie n t T h e rm a l Im p e d a n c e Z
th J-hs
(K / W )
St e a d y St at e V a lue
R
thJ-hs
= 0 .1 6 3 K /W
( Sing le Sid e C o o le d )
0 .1
R
thJ-hs
= 0 .0 7 3 K /W
( D o u ble Sid e C o o le d )
( D C O p e ra t io n )
0 .0 1
SD 3 0 0 C ..C Se rie s
0 .0 0 1
0.0 01
0 .01
0. 1
Sq u a re W a v e Pu lse D u rat io n ( s)
1
10
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
SD
2
-
-
-
-
-
-
-
30
3
0
4
C
5
32
6
C
7
Vishay Semiconductors product
Diode
Essential part number
0 = Standard recovery
C = Ceramic PUK
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
C = PUK case DO-200AA
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95248
Revision: 15-Apr-14
Document Number: 93544
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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