Continuous Source Current (MOSFET Diode Conduction)
a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a
Maximum Power Dissipation (Schottky)
a
Operating Junction and Storage Temperature Range
Note:
a. Surface mounted on 1" x 1" FR4 board.
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
T
J
, T
stg
P
D
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
1.05
0.5
8
1.15
0.59
1.0
0.52
- 55 to 150
2.4
1.7
8
0.75
0.5
8
0.83
0.53
0.76
0.48
°C
W
5s
20
20
± 12
2.0
1.4
A
Steady State
Unit
V
V
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3812DV
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
5s
Junction-to-Ambient
a
Steady State
Junction to Foot (MOSFET Drain, Schottky Cathode)
Note:
a. Surface mounted on 1" x 1" FR4 board.
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
R
thJF
R
thJA
Symbol
Typical
93
103
130
140
75
80
Maximum
110
125
150
165
90
95
°C/W
Unit
MOSFET AND SCHOTTKY SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET and Schottky)
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Schottky Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.0 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 6
1
10
30
14
6
30
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 2.4 A
2.1
0.3
0.4
3.7
17
50
25
12
50
ns
4.0
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
5
V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 2.4 A
V
GS
= 2.5 V, I
D
= 1.0 A
V
DS
= 5 V, I
D
= 2.4 A
I
S
= 1.5 A, V
GS
= 0 V
5
0.100
0.160
5
0.79
1.1
0.125
0.200
0.6
± 100
1
10
V
nA
µA
A
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 0.5 A
I
F
= 0.5 A, T
J
= 125 °C
V
R
= 20
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
R
= 20 V, T
J
= 75 °C
V
R
= 20 V, T
J
= 125 °C
V
R
= 10 V
Min.
Typ.
0.42
0.33
0.002
0.06
1.5
31
Max.
0.48
0.4
0.100
1
10
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3812DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
V
GS
= 4.5 V thru 3.5 V
8
I
D
- Drain Current (A)
3V
I
D
- Drain Current (A)
8
25 °C
125 °C
6
10
T
C
= - 55 °C
6
2.5 V
4
4
2
2V
1.5 V
2
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.5
300
Transfer Characteristics
R
DS(on)
- On-Resistance ()
0.4
250
C - Capacitance (pF)
C
iss
200
0.3
V
GS
= 2.5 V
0.2
V
GS
= 4.5 V
0.1
150
100
C
oss
50
C
rss
0.0
0
1
2
3
4
5
6
7
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4.5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 2.4 A
R
DS(on)
- On-Resistance
1.8
V
GS
= 4.5 V
I
D
= 2.4 A
Capacitance
3.6
1.6
1.4
(Normalized)
2.7
1.2
1.8
1.0
0.9
0.8
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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