MOSFET 30V/20V NChnl Power Trench MOSFET
| 参数名称 | 属性值 |
| 产品种类 Product Category | MOSFET |
| 制造商 Manufacturer | Infineon(英飞凌) |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-220-7 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 49 V |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 5.8 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 232 nC |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| 资格 Qualification | AEC-Q100 |
| Channel Mode | Enhancement |
| 系列 Packaging | Tube |
| Fall Time | 36 ns |
| Forward Transconductance - Min | 30 S |
| 高度 Height | 15.65 mm |
| 长度 Length | 10 mm |
| Pd-功率耗散 Pd - Power Dissipation | 300 W |
| Rise Time | 37 ns |
| 工厂包装数量 Factory Pack Quantity | 500 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 70 ns |
| Typical Turn-On Delay Time | 30 ns |
| 宽度 Width | 4.4 mm |
| 单位重量 Unit Weight | 0.070548 oz |
| BTS282ZE3230AKSA2 | BTS282ZE3180AATMA2 | |
|---|---|---|
| 描述 | MOSFET 30V/20V NChnl Power Trench MOSFET | Surface Mount Fuses 125V 20A V/FA NANO2 |
| 产品种类 Product Category |
MOSFET | MOSFET |
| 制造商 Manufacturer |
Infineon(英飞凌) | Infineon(英飞凌) |
| 技术 Technology |
Si | Si |
| 安装风格 Mounting Style |
Through Hole | SMD/SMT |
| 封装 / 箱体 Package / Case |
TO-220-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 49 V | 49 V |
| Id - Continuous Drain Current | 80 A | 36 A |
| Rds On - Drain-Source Resistance | 5.8 mOhms | 6.5 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V | 1.6 V |
| Vgs - Gate-Source Voltage | 20 V | 20 V |
| Qg - Gate Charge | 232 nC | 155 nC |
| 最小工作温度 Minimum Operating Temperature |
- 55 C | - 40 C |
| 最大工作温度 Maximum Operating Temperature |
+ 150 C | + 175 C |
| Configuration | Single | Single |
| 资格 Qualification |
AEC-Q100 | AEC-Q100 |
| Channel Mode | Enhancement | Enhancement |
| Fall Time | 36 ns | 36 ns |
| Forward Transconductance - Min | 30 S | 30 S |
| 高度 Height |
15.65 mm | 4.4 mm |
| 长度 Length |
10 mm | 10 mm |
| Pd-功率耗散 Pd - Power Dissipation |
300 W | 300 W |
| Rise Time | 37 ns | 37 ns |
| 工厂包装数量 Factory Pack Quantity |
500 | 1000 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Typical Turn-Off Delay Time | 70 ns | 70 ns |
| Typical Turn-On Delay Time | 30 ns | 30 ns |
| 宽度 Width |
4.4 mm | 9.25 mm |
| 单位重量 Unit Weight |
0.070548 oz | 0.056438 oz |
| 系列 Packaging |
Tube | Cut Tape |
模拟与混合信号
单片机
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