电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SI7958DP-T1-GE3

产品描述MOSFET Dual N-Ch 40V 16.5mohm @ 10V
产品类别分立半导体    晶体管   
文件大小141KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SI7958DP-T1-GE3在线购买

供应商 器件名称 价格 最低购买 库存  
SI7958DP-T1-GE3 - - 点击查看 点击购买

SI7958DP-T1-GE3概述

MOSFET Dual N-Ch 40V 16.5mohm @ 10V

SI7958DP-T1-GE3规格参数

参数名称属性值
是否无铅不含铅
厂商名称Vishay(威世)
零件包装代码SOT
包装说明SMALL OUTLINE, R-XDSO-C6
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
雪崩能效等级(Eas)61 mJ
外壳连接DRAIN
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压40 V
最大漏极电流 (Abs) (ID)7.2 A
最大漏极电流 (ID)7.2 A
最大漏源导通电阻0.0165 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-XDSO-C6
JESD-609代码e3
湿度敏感等级1
元件数量2
端子数量6
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)3.5 W
最大脉冲漏极电流 (IDM)40 A
认证状态Not Qualified
表面贴装YES
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
Si7958DP
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
40
R
DS(on)
(Ω)
0.0165 at V
GS
= 10 V
0.020 at V
GS
= 4.5 V
I
D
(A)
11.3
10.3
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package
• Dual MOSFET for Space Savings
PowerPAK SO-8
D
1
6.15 mm
S1
1
2
5.15 mm
G1
S2
D
2
3
4
D1
G2
8
7
D1
D2
G
1
6
5
D2
G
2
Bottom View
Ordering Information:
Si7958DP-T1-E3 (Lead (Pb)-free)
Si7958DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
a
Symbol
V
DS
V
GS
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
10 s
Steady State
40
± 20
Unit
V
11.3
9.0
40
2.9
35
61
3.5
2.2
- 55 to 150
260
7.2
5.8
A
1.2
mJ
1.4
0.9
W
°C
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72661
S09-0223-Rev. C, 09-Feb-09
www.vishay.com
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 466  2284  592  2000  730  10  46  12  41  15 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved