• 1N3016B-1 thru 1N3045B-1 AVAILABLE IN JAN, JANTX AND JANTXV
PER MIL-PRF-19500/115
• 1 WATT ZENER DIODES
• METALLURGICALLY BONDED
1N3016B thru1N3045B
and
1N3016B-1 thru 1N3045B-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 1watt @ TL = +95°C
Power Derating: 12.5 mW / °C above TL = +95°C
Forward Voltage @ 200mA: 1.2 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
CDI
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
1
VZ
@ ZT
(NOTE 2)
VOLTS
1N3016B
1N3017B
1N3018B
1N3019B
1N3020B
1N3021B
1N3022B
1N3023B
1N3024B
1N3025B
1N3026B
1N3027B
1N3028B
1N3029B
1N3030B
1N3031B
1N3032B
1N3033B
1N3034B
1N3035B
1N3036B
1N3037B
1N3038B
1N3039B
1N3040B
1N3041B
1N3042B
1N3043B
1N3044B
1N3045B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
ZENER
TEST
CURRENT
1ZT
MAXIMUM ZENER IMPEDANCE
(NOTE 3)
ZZT @ 1ZT
mA
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
OHMS
3.5
4.0
4.5
5
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
ZZK @ 1ZK
OHMS
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
mA
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
mA
140
125
115
105
95
85
80
74
63
60
52
47
43
40
34
31
28
26
23
21
19
18
17
15
14
12
11
10
9.0
8.3
MAX. DC
ZENER
CURRENT
1ZM
MAX. REVERSE
LEAKAGE CURRENT
lR @ VR
µ
A
5.0
5.0
5.0
5.0
5.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
VOLTS
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case DO-41.
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
80
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 15
°
C/W maximum
NOTE 1
NOTE 2
NOTE 3
No suffix signifies + 20%. “A” Suffix signifies + 10%, “B” Suffix signifies + 5%, “C” suffix
signifies + 2% , “D” suffix signifies +1%
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal
to 10% of 1ZT
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
25
1N3016
thru
1N3045B
FIGURE 2
Pd, Rated Power
Dissipation (mW)
1000
800
600
400
200
0
0
25
50
75
100
125
150
175
TL , Lead temperature (°C), 3/8” from body.
POWER DERATING CURVE
1000
ZZT, Zener Impedance (OHMS)
RMS value of
60CPS test
current set equal
to 10% of I
z
100
1N3044B
1N3034B
1N3018B
10
1N3034B
1N3022B
1
.1
1.0
10
OPERATING CURRENT lZT (mA)
100
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
26
嵌入式系统
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