MJE170G, MJE171G,
MJE172G (PNP), MJE180G,
MJE181G, MJE182G (NPN)
Complementary Plastic
Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
Features
http://onsemi.com
•
•
•
•
•
High DC Current Gain
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakages
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 − 60 − 80 VOLTS
12.5 WATTS
PNP
NPN
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Collector−Base Voltage
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
Collector−Emitter Voltage
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CB
60
80
100
V
CEO
40
60
80
V
EB
I
C
I
CM
I
B
P
D
12.5
0.012
P
D
1.5
0.1
T
J
, T
stg
HBM
MM
−65 to +150
3B
C
W
W/_C
_C
V
V
W
W/_C
7.0
3.0
6.0
1.0
Vdc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
3
BASE
COLLECTOR
2, 4
3
BASE
1
EMITTER
1
EMITTER
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
JE1xx
G
YWW
JE1xxG
= Year
= Work Week
= Specific Device Code
x = 70, 71, 72, 80, 81, or 82
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 13
Publication Order Number:
MJE171/D
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
10
83.4
Unit
_C/W
_C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mAdc, I
B
= 0)
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
MJE170G, MJE180G
(V
CB
= 80 Vdc, I
E
= 0)
MJE171G, MJE181G
(V
CB
= 100 Vdc, I
E
= 0)
MJE172G, MJE182G
(V
CB
= 60 Vdc, I
E
= 0, T
C
= 150°C)
MJE170G, MJE180G
(V
CB
= 80 Vdc, I
E
= 0, T
C
= 150°C)
MJE171G, MJE181G
(V
CB
= 100 Vdc, I
E
= 0, T
C
= 150°C)
MJE172G, MJE182G
Emitter Cutoff Current
(V
BE
= 7.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.5 Adc, V
CE
= 1.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.5 Adc, I
B
= 150 mAdc)
(I
C
= 3.0 Adc, I
B
= 600 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 1.5 Adc, I
B
= 150 mAdc)
(I
C
= 3.0 Adc, I
B
= 600 mAdc)
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJE171G/MJE172G
MJE181G/MJE182G
f
T
C
ob
−
−
60
40
50
−
MHz
pF
h
FE
50
30
12
V
CE(sat)
−
−
−
V
BE(sat)
−
−
V
BE(on)
−
1.2
1.5
2.0
Vdc
0.3
0.9
1.7
Vdc
250
−
−
Vdc
−
V
CEO(sus)
40
60
80
I
CBO
−
−
−
0.1
0.1
0.1
mAdc
mAdc
−
−
−
Vdc
Symbol
Min
Max
Unit
−
−
I
EBO
−
0.1
0.1
mAdc
0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. f
T
=
⎪h
fe
⎪•
f
test
.
http://onsemi.com
2
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
T
A
2.8
PD, POWER DISSIPATION (WATTS)
2.4
2.0
T
C
14
12
10
T
C
1.6 8.0
1.2 6.0
0.8 4.0
0.4 2.0
0
0
T
A
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
V
CC
+ 30 V
R
C
R
B
D
1
SCOPE
t, TIME (ns)
1K
500
300
200
100
50
30
20
10
5
3
2
NPN MJE181/182
PNP MJE171/172
3
5
10
t
r
V
CE
= 30 V
I
C
/I
B
= 10
V
BE(off)
= 4.0 V
T
J
= 25°C
25
ms
+11 V
0
- 9.0 V
51
t
r
, t
f
≤
10 ns
-4 V
DUTY CYCLE =
1.0%
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
t
d
1
1
2
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (AMPS)
Figure 2. Switching Time Test Circuit
Figure 3. Turn−On Time
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
0 (SINGLE PULSE)
q
JC
(t) = r(t)
q
JC
q
JC
= 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
Figure 4. Thermal Response
http://onsemi.com
3
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
ACTIVE−REGION SAFE OPERATING AREA
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
dc
5.0 ms
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
MJE171
MJE172
2.0 3.0
5.0
10
20 30
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
ms
500
ms
10
5.0
2.0
1.0
0.5
0.2
0.1
5.0 ms
dc
100
ms
500
ms
0.05
0.02
0.01
1.0
0.05
0.02
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
MJE181
RATED V
CEO
MJE182
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
0.01
1.0
Figure 5. MJE171, MJE172
Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of
a transistor − average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T
J(pk)
= 150°C; T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
J(pk)
< 150°C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
5K
3K
2K
1K
t, TIME (ns)
500
300
200
100
50
30
20
10
0.01
0.02 0.03 0.05 0.1 0.2 0.3
0.5
1
2
3
5
t
f
NPN MJE181/182
PNP MJE171/172
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
100
70
C, CAPACITANCE (pF)
50
PNP MJE171/MJE172
NPN MJE181/MJE182
C
ib
T
J
= 25°C
30
20
C
ob
10
10
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMPS)
2.0 3.0
5.0 7.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
50
Figure 7. Turn−Off Time
Figure 8. Capacitance
http://onsemi.com
4
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
ORDERING INFORMATION
Device
MJE170G
MJE171G
MJE172G
MJE180G
MJE181G
MJE182G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
http://onsemi.com
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
