Si4488DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
R
DS(on)
(Ω)
0.050 at V
GS
= 10 V
I
D
(A)
5.0
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
•
TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
D
SO-8
S
S
S
G
1
2
3
4
Top View
S
Ordering Information:
Si4488DY-T1-E3 (Lead (Pb)-free)
Si4488DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
I
S
P
D
T
J
, T
stg
2.8
3.1
2.0
- 55 to 150
5.0
4.0
50
25
1.4
1.56
1.0
W
°C
10 s
150
± 20
3.5
2.8
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
33
65
17
Maximum
40
80
21
°C/W
Unit
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
1
Si4488DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.8 A, dI/dt = 100 A/µs
V
DD
= 75 V, R
L
= 15
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 6
Ω
0.2
V
DS
= 75 V, V
GS
= 10 V, I
D
= 5 A
30
8.5
8.5
0.85
12
7
22
10
40
1.2
18
11
33
15
70
ns
Ω
36
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 120 V, V
GS
= 0 V
V
DS
= 120 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 5 A
I
S
= 2.8 A, V
GS
= 0 V
50
0.041
18
0.75
1.1
0.050
2.0
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 V thru 7 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6V
30
40
50
30
20
20
T
C
= 125 °C
10
25 °C
- 55 °C
0
10
5V
0
0
2
4
6
3, 4 V
8
10
0
1
2
3
4
5
6
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
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Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.10
25 °C, unless otherwise noted
3000
C - Capacitance (pF)
0.08
2500
2000
C
iss
1500
0.06
V
GS
= 10 V
R
DS(on)
-
0.04
1000
C
rss
C
oss
0.02
500
0.00
0
10
20
30
40
50
0
0
30
60
90
120
150
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
20
V
DS
= 75 V
I
D
= 5 A
16
R
DS(on)
- On-Resistance
(Normalized)
2.0
2.5
V
GS
= 10 V
I
D
= 5 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
12
1.5
8
1.0
4
0.5
0
0
15
30
45
60
Q
g
- Total Gate Charge (nC)
0.0
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
50
0.15
On-Resistance vs. Junction Temperature
0.12
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150 °C
10
I
D
= 5 A
0.09
0.06
T
J
= 25 °C
0.03
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
3
Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.0
100
0.5
V
GS(th)
Variance (V)
I
D
= 250 µA
I
DAV
(A)
10
0.0
T = 25 °C
- 0.5
1
- 1.0
T = 125 °C
- 1.5
- 50
- 25
0
25
50
75
100
125
150
0.1
10
-5
10
-4
10
-3
10
-2
Time (s)
10
-1
1
T
J
- Temperature (°C)
Threshold Voltage
Avalanche Current vs. Time
60
50
40
Power (W)
30
20
10
0
0.01
0.1
1
Time (s)
10
100
Single Pulse Power
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
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Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71240.
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
5
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