Bulletin I0138J rev. A 05/00
IR207LM..CS02CB SERIES
FAST RECOVERY DIODES
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Rectangular 207 x 157 mils
4"
200 to 600 V
Glassivated MOAT
Reference IR Packaged Part:
20ETF Series
Major Ratings and Characteristics
Parameters
V
FM
V
RRM
Maximum Forward Voltage
Reverse Breakdown Voltage Range
Units
1300 mV
200 to 600 V
Test Conditions
T
J
= 25°C, I
F
= 20 A
T
J
= 25°C, I
RRM
= 100 µA
(1)
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
207 x 157 mils (5.26x3.99 mm) - see drawing
100 mm, with std. < 110 > flat
260 µm
45 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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1
IR207LM..CS02CB Series
Bulletin I0138J rev. A 05/00
Ordering Information Table
Device Code
IR
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
207
2
L
3
M
4
06
5
C
6
S02
7
CB
8
Type of Device: L = Wire Bondable Fast Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = V
RRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
T
rr
code: S02 = 200 nsec
CB
= Probed Uncut Die (wafer in box)
Available Class
02 = 200 V
04 = 400 V
06 = 600 V
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters (mils)
2
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