E2G0146-18-11
¡ Semiconductor
MD51V65165
¡ Semiconductor
This version: Mar. 1998
MD51V65165
4,194,304-Word
¥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MD51V65165 is a 4,194,304-word
¥
16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MD51V65165 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MD51V65165 is available in a 50-pin plastic SOJ or 50-pin plastic TSOP.
FEATURES
• 4,194,304-word
¥
16-bit configuration
• Single 3.3 V power supply,
±0.3
V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh :
RAS-only
refresh
: 4096 cycles/64 ms
CAS
before
RAS
refresh, hidden refresh
: 4096 cycles/64 ms
• Fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
50-pin 400 mil plastic SOJ
(SOJ50-P-400-0.80)
(Product : MD51V65165-xxJA)
50-pin 400 mil plastic TSOP
(TSOPII50-P-400-0.80-1K) (Product : MD51V65165-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Family
MD51V65165-50
MD51V65165-60
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
84 ns
104 ns
504 mW
432 mW
1.8 mW
1/16
¡ Semiconductor
MD51V65165
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
V
CC
12
WE
13
RAS
14
NC 15
NC 16
NC 17
NC 18
A0 19
A1 20
A2 21
A3 22
A4 23
A5 24
V
CC
25
50 V
SS
49 DQ16
48 DQ15
47 DQ14
46 DQ13
45 V
SS
44 DQ12
43 DQ11
42 DQ10
41 DQ9
40 NC
39 V
SS
38
LCAS
37
UCAS
36
OE
35 NC
34 NC
33 NC
32 A11R
31 A10R
30 A9
29 A8
28 A7
27 A6
26 V
SS
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
V
CC
12
WE
13
RAS
14
NC 15
NC 16
NC 17
NC 18
A0 19
A1 20
A2 21
A3 22
A4 23
A5 24
V
CC
25
50 V
SS
49 DQ16
48 DQ15
47 DQ14
46 DQ13
45 V
SS
44 DQ12
43 DQ11
42 DQ10
41 DQ9
40 NC
39 V
SS
38
LCAS
37
UCAS
36
OE
35 NC
34 NC
33 NC
32 A11R
31 A10R
30 A9
29 A8
28 A7
27 A6
26 V
SS
50-Pin Plastic SOJ
50-Pin Plastic TSOP
(K Type)
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3 V)
Ground (0 V)
No Connection
Pin Name
A0 - A9,
A10R, A11R
RAS
LCAS
UCAS
DQ1 - DQ16
OE
WE
V
CC
V
SS
NC
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/16
¡ Semiconductor
MD51V65165
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance
(A0 - A9, A10R, A11R)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
5
7
7
Unit
pF
pF
pF
4/16
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
MD51V65165
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Condition
MD51V65165
-50
Min.
V
OH
I
OH
= –2.0 mA
V
OL
I
OL
= 2.0 mA
0 V
£
V
I
£
V
CC
+ 0.3 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
HPC
= Min.
—
140
—
120
mA 1, 3
—
140
—
120
mA 1, 2
—
5
—
5
mA
1
—
140
—
120
mA 1, 2
–10
10
–10
10
mA
2.4
0
Max.
V
CC
0.4
MD51V65165
-60
Min.
2.4
0
Max.
V
CC
0.4
V
V
Unit Note
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
mA
I
CC1
—
—
—
140
1
0.5
—
—
—
120
1
0.5
mA 1, 2
mA
1
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/16
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